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March 2003
.
STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015
- 50A TO-220/TO-220FP/I
PAK/DPAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.015
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
s
THROUGH-HOLE IPAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STP55NF06
STB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
50 A
50 A
50 A
50 A(*)
1
2
3
1
2
3
1
2
3
TO-220
TO-220FP
1
3
D
PAK
TO-263
(Suffix "T4")
I
PAK
TO-262
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area
(*)
Refer to soa for the max allowable current value on FP-type due
to Rth value
Symbol
Parameter
Value
Unit
STP_B55NF06(-1)
STP55NF06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
50
50(*)
A
I
D
Drain Current (continuous) at T
C
= 100C
35
35(*)
A
I
DM
(
)
Drain Current (pulsed)
200
200(*)
A
P
tot
Total Dissipation at T
C
= 25C
110
30
W
Derating Factor
0.73
0.2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
7
V/ns
E
AS (2)
Single Pulse Avalanche Energy
350
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
(1)
I
SD
50A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
T
j
= 25
o
C, I
D
= 25A, V
DD
= 30V
(2) Starting
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
I
PAK
DPAK
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
1.36
5
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
62.5
300
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 27.5 A
0.015
0.018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 27.5 A
18
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1530
300
105
pF
pF
pF
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STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 27.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
16
8
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 55 A V
GS
= 10V
44.5
10.5
17.5
60
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30V
I
D
= 27.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
36
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
50
200
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 55A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 55 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 5)
75
170
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area for TO-220FP
Safe Operating Area for
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
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Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
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