1/12
August 2002
STP55NF06L - STP55NF06LFP
STB55NF06L - STB55NF06L-1
N-CHANNEL 60V - 0.014
- 55A TO-220/FP/D
2
PAK/I
2
PAK
STripFETTMII POWER MOSFET
(1) Starting T
j
=25C, I
D
=27.5A, V
DD
=30V
(2) I
SD
55 A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
s
TYPICAL R
DS
(on) = 0.014
s
EXCEPTIONAL dv/dt CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size
TM"
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP55NF06L
STP55NF06LFP
STB55NF06L
STB55NF06L-1
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
55 A
55 A
55 A
55 A
Symbol
Parameter
Value
Unit
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
55
30
A
I
D
Drain Current (continuous) at T
C
= 100C
39
21
A
I
DM
(
l
)
Drain Current (pulsed)
220
120
A
P
TOT
Total Dissipation at T
C
= 25C
95
30
W
Derating Factor
0.63
0.2
W/C
dv/dt (2)
Peak Diode Recovery voltage slope
20
V/ns
E
AS
(1)
Single Pulse Avalanche Energy
300
mJ
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
55 to 175
C
T
j
Max. Operating Junction Temperature
TO-220
1
2
3
1
2
3
TO-220FP
1
3
1
2
3
I
2
PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
2/12
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
D
2
PAK
I
2
PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.58
5.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
= 27.5 A
0.016
0.020
V
GS
= 10V, I
D
= 27.5 A
0.014
0.018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15V , I
D
= 27.5 A
30
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1700
pF
C
oss
Output Capacitance
300
pF
C
rss
Reverse Transfer
Capacitance
105
pF
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STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, I
D
= 27.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
20
ns
t
r
Rise Time
100
ns
Q
g
Q
gs
Q
gs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V, I
D
= 55 A,
V
GS
= 4.5V
27
7
10
37
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30 V, I
D
= 27.5 A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 5)
40
20
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
55
A
I
SDM
(2)
Source-drain Current (pulsed)
220
A
V
SD
(1)
Forward On Voltage
I
SD
= 55 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 55A, di/dt = 100A/s,
V
DD
= 30 V, T
j
= 150C
(see test circuit, Figure 5)
80
200
5
ns
nC
A
Thermal Impedance for TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220/D2PAK/I2PAK
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
4/12
Safe Operating Area For TO-220FP
Static Drain-source On Resistance
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
5/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
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