STP5NB100
STP5NB100FP
N - CHANNEL 1000V - 2.4
- 5A - TO-220/TO-220FP
PowerMESH
TM
MOSFET
TYPICAL R
DS(on)
= 2.4
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an
advanced family
of
power
MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
February 2000
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P5NB100
STP5NB100FP
V
DS
Drain-source Voltage (V
GS
= 0)
1000
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
1000
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
5
5(*)
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
3.1
3.1(*)
A
I
DM
(
)
Drain Current (pulsed)
15.2
15. 2
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
135
40
W
Derat ing Factor
1.08
0.32
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ ns
V
ISO
I nsulat ion W ithst and Voltage (DC)
2000
V
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
5 A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
(*) Limited only by maximum temperature allowed
T YPE
V
DSS
R
DS(on)
I
D
STP5NB100
STP5NB100F P
1000 V
1000 V
< 2.7
< 2.7
5 A
5 A
1/9
THERMAL DATA
TO-220
TO-220F P
R
thj- ca se
Thermal Resistance Junction-case
Max
0.93
3. 12
o
C/W
R
t hj-a mb
R
thc -sin k
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature F or Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repet itive or Not -Repet itive
(pulse widt h limited by T
j
max)
5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
1000
V
I
DSS
Zero Gate Voltage
Drain Current (V
G S
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V
GS(th )
Gat e T hreshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on )
Static Drain-source On
Resistance
V
G S
= 10 V
I
D
= 2.5 A
2.4
2.7
I
D(on)
On Stat e Drain Current
V
DS
> I
D(on )
x R
DS(on )max
V
G S
= 10 V
5
A
DYNAMIC
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on )
x R
DS(on )max
I
D
= 2.5 A
1. 5
S
C
is s
C
os s
C
rs s
Input Capacitance
Out put Capacitance
Reverse Tr ansf er
Capacit ance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1500
150
17
pF
pF
pF
STP5NB100/STP5NB100FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
t
d( on)
t
r
Turn-on T ime
Rise Time
V
DD
= 500 V
I
D
= 2.5 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
24
11
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 800 V
I
D
= 5 A V
GS
= 10 V
39
9.6
19. 2
51
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
t
r(Vof f )
t
f
t
c
Off-volt age Rise Time
Fall Time
Cross-over T ime
V
DD
= 800 V
I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
20
22
26
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
V
SD
(
)
Forward O n Voltage
I
SD
= 5 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
780
5.5
14
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP5NB100/STP5NB100FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP5NB100/STP5NB100FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP5NB100/STP5NB100FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP5NB100/STP5NB100FP
6/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP5NB100/STP5NB100FP
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP5NB100/STP5NB100FP
8/9
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This public ation supersedes and replaces all information previously suppli ed. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
STP5NB100/STP5NB100FP
9/9
PDF 
ZIP