STP5NB60
STP5NB60FP
N - CHANNEL 600V - 1.8
- 5A - TO-220/TO-220FP
PowerMESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 1.8
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
September 1999
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
STP5NB60
STP5NB60F P
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gat e Voltage (R
GS
= 20 k
)
600
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
5
3
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
3.1
1.9
A
I
DM
(
)
Drain Current (pulsed)
20
20
A
P
tot
T otal Dissipation at T
c
= 25
o
C
100
35
W
Derating F act or
0.8
0.28
W /
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
I nsulation Wit hstand Voltage (DC)
2000
V
T
s tg
Storage T emperature
-65 to 150
o
C
T
j
Max. Operating Junction T emperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
5A, di/dt
200 A/
s, V
DD
V
( BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
ST P5NB60
ST P5NB60FP
600 V
600 V
< 2.0
< 2.0
5 A
3 A
1/9
THERMAL DATA
TO-220
TO220-FP
R
thj -case
Thermal Resistance Junction-case
Max
1.25
3.57
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Mi n.
Value
Max.
Val ue
Unit
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by T
j
max)
5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
300
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
600
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
G S(th)
Gat e Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source O n
Resist ance
V
GS
= 10V
I
D
= 2.5 A
1.8
2. 0
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
5. 0
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
g
f s
(
)
Forward
Transconduct ance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 2.5 A
2. 5
4.5
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
680
103
10.5
884
139
14
pF
pF
pF
STP5NB60/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
I
D
= 2.5 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
12
10
17
14
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 480 V
I
D
= 5 A V
GS
= 10 V
21
7.6
7.5
30
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
8
7
15
13
12
23
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
V
SD
(
)
Forward On Volt age
I
SD
= 5 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
610
3.6
11.7
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP5NB60/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP5NB60/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP5NB60/FP
5/9
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