STB60NE03L-10
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE
TM
" POWER MOSFET
s
TYPICAL R
DS(on)
= 0.007
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
o
C
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Volt age (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
G S
Gat e-source Voltage
15
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
60
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
42
A
I
DM
(
)
Drain Current (pulsed)
240
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
120
W
Derating F act or
0.8
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ ns
T
stg
Storage T emperat ure
-65 to 175
o
C
T
j
Max. O perating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
60 A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
T YPE
V
DSS
R
DS(o n)
I
D
ST B60NE03L-10
30 V
< 0.010
60 A
1
3
D
2
PAK
TO-263
(suffix "T4")
1/8
THERMAL DATA
R
t hj-ca se
Rthj -am b
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.25
62.5
0.5
300
o
C/ W
oC/W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
60
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 20 V)
600
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
15 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
1
1.7
2.5
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 30 A
V
G S
= 5V
I
D
= 30 A
0.007
0.01
0.015
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
60
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
=30 A
25
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
4000
1000
320
5400
1350
450
pF
pF
pF
STB60NE03L-10
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 30 A
R
G
=4.7
V
GS
= 5 V
(see test circuit, figure 3)
35
240
50
320
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V
I
D
= 60 A
V
GS
= 5 V
62
20
31
85
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V
I
D
= 60 A
R
G
=4.7
V
GS
= 5 V
(see test circuit, figure 5)
60
80
150
80
110
200
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
di/ dt = 100 A/
s
V
DD
= 24 V
T
j
= 150
o
C
(see test circuit, figure 5)
70
0. 13
4
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB60NE03L-10
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB60NE03L-10
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB60NE03L-10
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STB60NE03L-10
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
L2
L3
L
B2
B
G
E
A
C2
D
C
A1
P011P6/C
TO-263 (D2PAK) MECHANICAL DATA
STB60NE03L-10
7/8
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STB60NE03L-10
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