STP60NE06L-16
STP60NE06L-16FP
N - CHANNEL 60V - 0.014
- 60A TO-220/TO-220FP
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.014
s
AVALANCHE RUGGED TECHNOLOGY
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size
TM
"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
STP60NE06L-16
STP60NE06L-16FP
V
DS
Drain-source Volt age (V
GS
= 0)
60
V
V
DGR
Drain- gat e Voltage (R
G S
= 20 k
)
60
V
V
GS
Gat e-source Voltage
15
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
60
35
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
42
24
A
I
DM
(
)
Drain Current (pulsed)
240
140
A
P
tot
Tot al Dissipation at T
c
= 25
o
C
150
45
W
Derating F act or
1
0. 3
W /
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
dv/dt
Peak Diode Recovery voltage slope
6
V/ ns
T
s tg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
60 A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STP60NE06L-16
STP60NE06L-16FP
60 V
60 V
< 0. 016
< 0. 016
60 A
35 A
May 2000
TO-220
TO-220FP
1
2
3
1
2
3
1/9
THERMAL DATA
TO-220
TO-220FP
R
thj -case
Thermal Resistance Junction-case
Max
0. 94
2.7
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
60
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25V)
400
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
60
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
15 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.6
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5V
I
D
= 30 A
V
GS
= 10V
I
D
= 30 A
0.014
0.012
0.016
0.014
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
60
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=30 A
30
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
4150
590
150
pF
pF
pF
STP60NE06L-16/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 30 V
I
D
= 30 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, see fig. 3)
50
155
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 40 V
I
D
= 60 A
V
G S
= 5 V
55
15
30
70
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 30 V
I
D
= 30 A
R
G
=4.7
V
GS
= 5 V
(Resistive Load, see fig. 3)
125
25
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 48 V
I
D
= 20 A
R
G
= 4.7
V
GS
= 5 V
(Induct ive Load, see fig. 5)
45
220
280
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
di/ dt = 100 A/
s
V
DD
= 30 V
T
J
= 150
o
C
(see t est circuit, f ig. 5)
85
300
7
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP60NE06L-16/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP60NE06L-16/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP60NE06L-16/FP
5/9
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