1/9
January 2002
STP60NF06
STP60NF06FP
N-CHANNEL 60V - 0.014
- 60A TO-220/TO-220FP
STripFETTM POWER MOSFET
(1) I
SD
60A, di/dt
400 A/
s, V
DD
24V, Tj
T
jMAX
s
TYPICAL R
DS
(on) = 0.014
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP60NF06
STP60NF06FP
60 V
60 V
< 0.016
< 0.016
60A
60A
Symbol
Parameter
Value
Unit
STP60NF06
STP60NF06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
60
37
A
I
D
Drain Current (continuos) at T
C
= 100C
42
26
A
I
DM
(
l
)
Drain Current (pulsed)
240
148
A
P
TOT
Total Dissipation at T
C
= 25C
110
42
W
Derating Factor
0.73
0.28
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
V
T
stg
Storage Temperature
65 to 175
C
T
j
Max. Operating Junction Temperature
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
STP60NF06 - STP60NF06FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.36
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
30
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 30 V)
360
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 30 A
0.014
0.016
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=15V , I
D
= 30 A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1810
pF
C
oss
Output Capacitance
360
pF
C
rss
Reverse Transfer
Capacitance
125
pF
3/9
STP60NF06 - STP60NF06FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, I
D
= 30 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
108
ns
Q
g
Total Gate Charge
V
DD
= 48V, I
D
=60A,V
GS
= 10V
49
66
nC
Q
gs
Gate-Source Charge
18
nC
Q
gd
Gate-Drain Charge
14
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 30 V, I
D
= 30 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
43
20
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48V, I
D
= 60 A
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
60
A
I
SDM
(2)
Source-drain Current (pulsed)
240
A
V
SD
(1)
Forward On Voltage
I
SD
= 60 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A, di/dt = 100A/s,
V
DD
= 25V, T
j
= 150C
(see test circuit, Figure 5)
73
182
5
ns
nC
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
STP60NF06 - STP60NF06FP
4/9
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
5/9
STP60NF06 - STP60NF06FP
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
STP60NF06 - STP60NF06FP
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
STP60NF06 - STP60NF06FP
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP60NF06 - STP60NF06FP
8/9
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
9/9
STP60NF06 - STP60NF06FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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