1/9
Jun 2000
STP6NB25
STP6NB25FP
N-CHANNEL 250V - 0.9
- 6A TO-220/TO-220FP
PowerMesh
TM
MOSFET
s
TYPICAL R
DS
(on) = 0.9
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
(
)Pulse width limite d by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP6NB25
250 V
< 1.1
6 A
STP6NB25FP
250 V
< 1.1
3.7 A
Symbol
Parameter
Value
Unit
STP6NB25
STP6NB25FP
V
DS
Drain-source Voltage (V
GS
= 0)
250
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
250
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25
C
6
3.7
A
I
D
Drain Current (continuos) at T
C
= 100
C
3.8
2.3
A
I
DM
(
q
)
Drain Current (pulsed)
24
24
A
P
TOT
Total Dissipation at T
C
= 25
C
75
30
W
Derating Factor
0.6
0.24
W/
C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2000
T
stg
Storage Temperature
60 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
6A, di/dt
100A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
1
2
3
1
2
3
TO-220
TO-220FP
STP6NB25/FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25
C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.66
4.17
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
200
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125
C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
=3 A
0.9
1.1
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
6
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3A
3
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
260
pF
C
oss
Output Capacitance
68
pF
C
rss
Reverse Transfer
Capacitance
9
pF
3/9
STP6NB25/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 125 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
9
ns
t
r
9
ns
Q
g
Total Gate Charge
V
DD
= 200V, I
D
= 6 A,
V
GS
= 10V
12
17
nC
Q
gs
Gate-Source Charge
7.5
nC
Q
gd
Gate-Drain Charge
3
nC
Symbol
Parameter
Test Condit ions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 200V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
8
ns
t
f
Fall Time
7
ns
t
c
Cross-over Time
15
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
6
A
I
SDM
(2)
Source-drain Current (pulsed)
24
A
V
SD
(1)
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 6 A, di/dt = 100A/
s,
V
DD
= 100V, T
j
= 150
C
(see test circuit, Figure 5)
160
ns
Q
rr
Reverse Recovery Charge
720
C
I
RRM
Reverse Recovery Current
9
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP6NB25/FP
4/9
Thermal Impedence for TO-220
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Thermal Impedence for TO-220FP
5/9
STP6NB25/FP
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage
STP6NB25/FP
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
STP6NB25/FP
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP6NB25/FP
8/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
9/9
STP6NB25/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2000 STMicroelectronics Printed in Italy All Rights Reserved
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