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Электронный компонент: STP70NF03L

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1/11
June 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF03L@ B70NF03L@
STB70NF03L STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.0075
- 70A DPAK/IPAK/TO-220
LOW GATE CHARGE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0075
@ 10 V
s
OPTIMAL R
DS(on)
x Qg TRADE-OFF @ 5 V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique "Sin-
gle Feature SizeTM" strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STB70NF03L
STP70NF03L
STB70NF03L-1
30 V
30 V
30 V
< 0.0095
< 0.0095
< 0.0095
70 A
70 A
70 A
1
2
3
1
3
D
2
PAK
TO-263
(Suffix "T4")
TO-220
1
2
3
I
2
PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
(
)
Current limited by the package
(1) I
SD
70A, di/dt
350A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 35A, V
DD
= 25V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
18
V
I
D
(#)
Drain Current (continuous) at T
C
= 25C
70
A
I
D
Drain Current (continuous) at T
C
= 100C
50
A
I
DM
(
)
Drain Current (pulsed)
280
A
P
tot
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.67
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
5.5
V/ns
E
AS (2)
Single Pulse Avalanche Energy
500
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB70NF03L STP70NF03L
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 18 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 35 A
V
GS
= 5 V
I
D
= 18 A
0.0075
0.0135
0.0095
0.018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 35 A
25
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
1440
560
135
pF
pF
pF
3/11
STB70NF03L STP70NF03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 35 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 3)
22
165
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V I
D
= 70A V
GS
= 5V
22.5
9
12
30
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 35 A
R
G
= 4.7
,
V
GS
= 5 V
(Resistive Load, Figure 3)
21
25
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
70
280
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 70 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 70 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
42
52
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB70NF03L STP70NF03L
4/11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/11
STB70NF03L STP70NF03L
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.