STP7NB40
STP7NB40FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
TM
MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.75
s
EXTREMELY HIGH dV/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NB40
STP7NB40FP
V
DS
Drain-source Voltage (V
GS
= 0)
400
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
400
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
7
4.4
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
4.4
2.8
A
I
DM
(
)
Drain Current (pulsed)
28
28
A
P
tot
Total Dissipation at T
c
= 25
o
C
100
35
W
Derating Factor
0.8
0.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area (
1
) I
SD
7A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
January 1998
1
2
3
TO-220 TO-220FP
1
2
3
TYPE
V
DSS
R
DS(on)
I
D
STP7NB40
STP7NB40FP
400 V
400 V
< 0.9
< 0.9
7.0 A
4.4 A
1/4
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case Max
1.25
3.57
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
7
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
300
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
400
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 3.5 A
0.75
0.9
I
D(on )
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.5 A
2.5
4.2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
705
132
17
720
175
25
pF
pF
pF
STP7NB40/FP
2/4
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 200 V I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
11.5
7.5
16
11
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 320 V I
D
= 7 A V
GS
= 10 V
21
7.3
8.5
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320 V I
D
= 7 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
9.5
9
16.5
15
14
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
7
28
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 7 A V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7 A di/dt = 100 A/
s
V
DD
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
300
2
13.7
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STP7NB40/FP
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STP7NB40/FP
4/4
PDF 
ZIP