STP80NE03L-06
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE
TM
" POWER MOSFET
s
TYPICAL R
DS(on)
= 0.005
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
o
C
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
"
strip-based
process.
The
resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalance
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
February 2000
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
G ate-source Volt age
22
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
80
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
60
A
I
DM
(
)
Drain Current (pulsed)
320
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
150
W
Derating Factor
1
W /
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
T
s tg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
80 A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
T YPE
V
DSS
R
DS(on)
I
D
STP80NE03L-06
30 V
< 0. 006
80 A
1/8
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1
62.5
0.5
300
o
C/W
oC/ W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
80
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15 V)
600
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
=125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
15 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.7
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 40 A
V
GS
= 5V
I
D
= 40 A
0.005
0.006
0.009
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
80
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=40 A
30
50
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
6500
1500
500
8700
2000
700
pF
pF
pF
STP80NE03L-06
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 40 A
R
G
=4.7
V
GS
= 5 V
(see t est circuit, f igure 3)
40
260
55
350
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V
I
D
= 80 A
V
G S
= 5 V
95
30
44
130
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 24 V
I
D
= 80 A
R
G
=4.7
V
GS
= 5 V
(see t est circuit, f igure 5)
70
165
250
95
220
340
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
80
320
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 80 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 80 A
di/ dt = 100 A/
s
V
DD
= 15 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
75
0.14
4
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for
Thermal Impedance
STP80NE03L-06
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP80NE03L-06
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP80NE03L-06
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP80NE03L-06
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP80NE03L-06
7/8
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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