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March 2004
STP80NF06 - STB80NF06
STW80NF06
N-CHANNEL 60V - 0.0065
- 80A TO-220/D
2
PAK/TO-247
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0065
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore
a remarkable
manufacturing reproducibility.
APPLICATIONS
s
DC-AC & DC-DC CONVERTERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
ORDER CODES
TYPE
V
DSS
R
DS(on)
I
D
STB80NF06
STP80NF06
STW80NF06
60 V
60 V
60 V
< 0.010
< 0.010
< 0.010
80 A
80 A
80 A
PART NUMBER
MARKING
PACKAGE
PACKAGING
STB80NF06T4
B80NF06
D
2
PAK
TAPE & REEL
STP80NF06
P80NF06
TO-220
TUBE
STW80NF06
W80NF06
TO-247
TUBE
TO-247
1
2
3
1
2
3
TO-220
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP80NF06 - STB80NF06 - STW80NF06
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ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
(1) Starting T
j
= 25C, I
D
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
(*)
Drain Current (continuous) at T
C
= 25C
80
A
I
D
Drain Current (continuous) at T
C
= 100C
80
A
I
DM
( )
Drain Current (pulsed)
320
A
P
TOT
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
E
AS
(1)
Single Pulse Avalanche Energy
870
mJ
T
stg
Storage Temperature
65 to 175
C
T
j
Max. Operating Junction Temperature
175
C
Rthj-case
Thermal Resistance Junction-case Max
0.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 40 A
0.0065
0.010
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> 2.5 V
,
I
D
=18 A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3850
pF
C
oss
Output Capacitance
800
pF
C
rss
Reverse Transfer
Capacitance
250
pF
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STP80NF06 - STB80NF06 - STW80NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
25
ns
t
r
Rise Time
85
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
115
24
46
150
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
70
25
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, I
D
=80A
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
85
75
110
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
80
A
I
SDM
(1)
Source-drain Current (pulsed)
320
A
V
SD
(2)
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/s,
V
DD
= 50V, T
j
= 150C
(see test circuit, Figure 5)
80
250
6.4
ns
nC
A
Thermal Impedance
Safe Operating Area
STP80NF06 - STB80NF06 - STW80NF06
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Gate Charge vs Gate-source Voltage
Tranconductance
Output Characteristics
Capacitance Variations
Tranfer Characteristics
Static Drain-Source On Resistance
5/10
STP80NF06 - STB80NF06 - STW80NF06
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
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