1/12
March 2003
STB80NF12 STW80NF12
STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013
-80A TO-220/TO-247/TO-220FP/DPAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.013
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
SURFACE-MOUNTING D
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB80NF12
STP80NF12
STP80NF12FP
STW80NF12
120 V
120 V
120 V
120 V
<0.018
<0.018
<0.018
<0.018
80 A(*)
80 A(*)
80 A(*)
80 A(*)
1
2
3
1
3
1
2
3
TO-220
D
PAK
TO-263
(Suffix "T4")
TO-220FP
TO-247
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(*) Limited by Package
(2) I
SD
35A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(1) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 45V
Symbol
Parameter
Value
Unit
STB_P_W80NF12 STP80NF12FP
V
DS
Drain-source Voltage (V
GS
= 0)
120
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
120
V
V
GS
Gate- source Voltage
20
V
I
D
(*)
Drain Current (continuous) at T
C
= 25C
80
80(#)
A
I
D
Drain Current (continuous) at T
C
= 100C
60
60(#)
A
I
DM
(
)
Drain Current (pulsed)
320
320(#)
A
P
tot
Total Dissipation at T
C
= 25C
300
45
W
Derating Factor
2.0
0.3
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS (2)
Single Pulse Avalanche Energy
700
mJ
V
ISO
Insulation Withstand Voltage (DC)
------
2500
V
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
2/12
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(1)
DYNAMIC
TO-247
D
2
PAK
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
0.5
0.5
3.33
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
50
300
62.5
300
62.5
300
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
120
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 40 A
0.013
0.018
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 40 A
80
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
4300
600
230
pF
pF
pF
3/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
40
145
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V I
D
= 80 A V
GS
= 10V
140
23
51
189
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
I
D
= 40 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
134
115
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
di/dt = 100A/s
V
DD
= 35 V
T
j
= 150C
(see test circuit, Figure 5)
155
0.85
11
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Safe Operating Area for TO-220FP
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
4/12
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
5/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
6/12
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.016
V2
0
8
0
8
D
PAK MECHANICAL DATA
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
8/12
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
9/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
10/12
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
TO-247 MECHANICAL DATA
11/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
D
2
PAK FOOTPRINT
TAPE MECHANICAL DATA
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
12/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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