STP8NA50
STP8NA50FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.7
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE GHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
coupled
with
a
new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS ( on)
I
D
STP8NA50
STP8NA50FI
500 V
500 V
< 0. 85
< 0. 85
8 A
4.5 A
1
2
3
TO-220
ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP8NA50
STP8NA50FI
V
D S
Drain-source Voltage (V
GS
= 0)
500
V
V
DG R
Drain-gate Volt age (R
G S
= 20 k
)
500
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
8
4.5
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
5.3
3
A
I
D M
(
)
Drain Current (pulsed)
32
32
A
P
tot
Total Dissipation at T
c
= 25
o
C
125
45
W
Derating Factor
1
0.36
W/
o
C
V
ISO
I nsulat ion Withstand Voltage (DC)
2000
V
T
stg
St orage Temperat ure
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
1
2
3
1/10
THERMAL DATA
TO-220
ISOWATT220
R
thj-cas e
Thermal Resist ance Junct ion-case
Max
1
2. 78
o
C/W
R
thj- amb
R
t hc- sin k
T
l
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
8
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 50 V)
350
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
11
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
5.3
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
500
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
25
250
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2. 25
3
3. 75
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 10V
I
D
= 4 A
0.7
0. 85
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
8
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 4 A
4.5
6.5
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
1200
190
55
1600
250
75
pF
pF
pF
STP8NA50/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 4 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
18
25
25
35
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 400 V
I
D
= 8 A
R
G
= 47
V
GS
= 10 V
(see test circuit, figure 5)
220
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
= 8 A
V
GS
= 10 V
55
9
25
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 8 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
15
15
25
22
22
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 8 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
500
6.5
26
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
STP8NA50/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP8NA50/FI
4/10
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
STP8NA50/FI
5/10
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
STP8NA50/FI
6/10
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP8NA50/FI
7/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP8NA50/FI
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP8NA50/FI
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
STP8NA50/FI
10/10
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