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December 2000
STP8NC50 - STP8NC50FP
STB8NC50-1
N-CHANNEL 500V - 0.7
- 8A TO-220/TO-220FP/I2PAK
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 0.7
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
TYPE
V
DSS
R
DS(on)
I
D
STP(B)8NC50(-1)
500 V
< 0.85
8 A
STP8NC50FP
500 V
< 0.85
8 A
Symbol
Parameter
Value
Unit
STP(B)8NC50(-1)
STP8NC50FP
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
8
8(*)
A
I
D
Drain Current (continuos) at T
C
= 100C
5.4
5.4(*)
A
I
DM
(
q
)
Drain Current (pulsed)
32
32(*)
A
P
TOT
Total Dissipation at T
C
= 25C
135
40
W
Derating Factor
1.075
0.32
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2000
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
8A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
TO-220
TO-220FP
1
2
3
IPAK
1
2
3
STP8NC50/FP/STB8NC50-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220/I2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
0.93
3.12
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
8
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4 A
0.7
0.85
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
8
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4A
7.5
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1050
pF
C
oss
Output Capacitance
165
pF
C
rss
Reverse Transfer
Capacitance
25
pF
3/10
STP8NC50/FP/STB8NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250 V, I
D
= 4 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
19
ns
t
r
Rise Time
14
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 8 A,
V
GS
= 10V
36
46
nC
Q
gs
Gate-Source Charge
5
nC
Q
gd
Gate-Drain Charge
18.2
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
13
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
26
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
8
A
I
SDM
(2)
Source-drain Current (pulsed)
32
A
V
SD
(1)
Forward On Voltage
I
SD
= 8 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
=8 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
470
ns
Q
rr
Reverse Recovery Charge
3.2
C
I
RRM
Reverse Recovery Current
13.7
A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
STP8NC50/FP/STB8NC50-1
4/10
Transfer Characteristics
Thermal Impedence for TO-220FP
Thermal Impedence for TO-220/I2PAK
Output Characteristics
Transconductance
Static Drain-source On Resistance
5/10
STP8NC50/FP/STB8NC50-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP8NC50/FP/STB8NC50-1
6/10
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/10
STP8NC50/FP/STB8NC50-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP8NC50/FP/STB8NC50-1
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
9/10
STP8NC50/FP/STB8NC50-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I
2
PAK) MECHANICAL DATA
STP8NC50/FP/STB8NC50-1
10/10
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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