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August 2002
STP8NM50
STP8NM50FP
N-CHANNEL 500V - 0.7
- 8A TO-220/TO-220FP
MDmeshTMPower MOSFET
(*)Limited only by maximum temperature allowed
n
TYPICAL R
DS
(on) = 0.7
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP8NM50
STP8NM50FP
500V
500V
< 0.8
< 0.8
8 A
8 A
Symbol
Parameter
Value
Unit
STP8NM50
STP8NM50FP
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
5
5 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
3.1
3.1 (*)
A
I
DM
(
l
)
Drain Current (pulsed)
20
20 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
120
30
W
Derating Factor
0.4
W/C
dv/dt
Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
TO-220
TO-220FP
1
2
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STP8NM50/STP8NM50FP
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
TO-220 / IPAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.04
4.21
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
200
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2.5A
0.7
0.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5A
2.4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
415
pF
C
oss
Output Capacitance
88
pF
C
rss
Reverse Transfer
Capacitance
12
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
50
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
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STP8NM50/STP8NM50FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 2.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
8
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 5A,
V
GS
= 10V
13
nC
Q
gs
Gate-Source Charge
4
nC
Q
gd
Gate-Drain Charge
6
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
14
ns
t
f
Fall Time
6
ns
t
c
Cross-over Time
13
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
5
A
I
SDM
(2)
Source-drain Current (pulsed)
20
A
V
SD
(1)
Forward On Voltage
I
SD
= 5A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Charge
I
SD
= 5A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
185
1.1
11.5
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Charge
I
SD
= 5A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
270
1.6
12
ns
C
A
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220
STP8NM50/STP8NM50FP
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Static Drain-source On Resistance
Thermal Impedance For TO-220
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
Output Characteristics
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STP8NM50/STP8NM50FP
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized On Resistance vs Temperature
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