STP9NC60
STP9NC60FP
N - CHANNEL 600V - 0.6
- 9A TO-220/TO-220FP
PowerMESH
TM
MOSFET
TYPICAL R
DS(on)
= 0.6
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II
is the evolution of the first
generation of MESH OVERLAY
TM
. The layout
refinements
introduced
greatly
improve
the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
February 2000
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P9NC60
STP9NC60F P
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DG R
Drain- gate Volt age (R
GS
= 20 k
)
600
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
9.0
5.2
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
5.7
3.3
A
I
DM
(
)
Drain Current (pulsed)
36
36
A
P
tot
T otal Dissipation at T
c
= 25
o
C
125
40
W
Derating Fact or
1.0
0.32
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ ns
V
ISO
I nsulat ion W it hst and Voltage (DC)
2000
V
T
s tg
Storage Temperat ure
-65 to 150
o
C
T
j
Max. O perat ing Junct ion Temperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
9A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
T YPE
V
DSS
R
DS(on)
I
D
STP9NC60
STP9NC60FP
600 V
600 V
< 0.75
< 0.75
9.0 A
5.2 A
1/9
THERMAL DATA
T O- 220
T O-220F P
R
thj- ca se
Thermal Resistance Junction-case
Max
1.0
3.12
o
C/W
R
t hj-a mb
R
thc -sin k
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limit ed by T
j
max,
< 1%)
9
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
850
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
600
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
G SS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
V
GS(th )
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS(on )
Static Drain-source On
Resistance
V
G S
= 10V
I
D
= 4 A
0.6
0.75
I
D(on)
On Stat e Drain Current
V
DS
> I
D(on )
x R
DS(on )max
V
G S
= 10 V
9. 0
A
DYNAMIC
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on )
x R
DS(on )max
I
D
= 4 A
10
S
C
is s
C
os s
C
rs s
Input Capacit ance
Output Capacitance
Reverse T ransf er
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1400
196
31
pF
pF
pF
STP9NC60/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
t
d( on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 300 V
I
D
= 4. 5 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
28
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V I
D
= 9. 0 A V
GS
= 10 V
44
10. 5
19. 5
62
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
t
d( off )
t
f
Turn-off Delay Time
Fall T ime
V
DD
= 300 V
I
D
= 4. 5 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
53
30
ns
ns
t
r(Vof f )
t
f
t
c
Off-volt age Rise Time
Fall T ime
Cross-over Time
V
DD
= 480 V
I
D
= 9. 0 A
R
G
= 4.7
V
GS
= 10 V
(I nduct ive Load, see fig. 5)
15
12
24
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Cond iti ons
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
9.0
36
A
A
V
SD
(
)
Forward O n Voltage
I
SD
= 9 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 9 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit , fig. 5)
610
5.4
17
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP9NC60/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP9NC60/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP9NC60/FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP9NC60/FP
6/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.1 81
C
1.23
1.32
0.048
0.0 51
D
2.40
2.72
0.094
0.1 07
D1
1.27
0.050
E
0.49
0.70
0.019
0.0 27
F
0.61
0.88
0.024
0.0 34
F 1
1.14
1.70
0.044
0.0 67
F 2
1.14
1.70
0.044
0.0 67
G
4.95
5.15
0.194
0.2 03
G 1
2.4
2.7
0.094
0.1 06
H2
10.0
1 0.4 0
0.393
0.4 09
L2
16.4
0.645
L4
13.0
14.0
0.511
0.5 51
L5
2.65
2.95
0.104
0.1 16
L6
15.2 5
1 5.7 5
0.600
0.6 20
L7
6.2
6.6
0.244
0.2 60
L9
3.5
3.93
0.137
0.1 54
DIA.
3.75
3.85
0.147
0.1 51
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP9NC60/FP
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.1 81
B
2.5
2.7
0.098
0.1 06
D
2.5
2.75
0.098
0.1 08
E
0.45
0.7
0.017
0.0 27
F
0.75
1
0.030
0.0 39
F 1
1.15
1.7
0.045
0.0 67
F 2
1.15
1.7
0.045
0.0 67
G
4.95
5.2
0.195
0.2 04
G 1
2.4
2.7
0.094
0.1 06
H
10
10.4
0.393
0.4 09
L2
16
0.630
L3
28.6
30.6
1.126
1.2 04
L4
9.8
10.6
0.385
0.4 17
L6
15.9
16.4
0.626
0.6 45
L7
9
9.3
0.354
0.3 66
3
3.2
0.118
0.1 26
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP9NC60/FP
8/9
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This public ation supersedes and replaces all information previously suppli ed. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
STP9NC60/FP
9/9
PDF 
ZIP