1/14
August 2002
s
LOW R
DS(on)
: 4
TYP
s
30mJ AVAILANCHE ENERGY
s
EIGHT 100mA DMOS OUTPUTS
s
250mA CURRENT LIMIT CAPABILITY
s
33V OUTPUT CLAMP VOLTAGE
s
DEVICE ARE CASCADABLE
s
LOW POWER CONSUMPTION
DESCRIPTION
This
STPIC6C595
is
a
monolithic,
medium-voltage, low current power 8-bit shift
register designed for use in systems that require
relatively moderate load power such as LEDs. The
device contains a built-in voltage clamp on the
outputs for inductive transient protection. Power
driver applications include relays, solenoids, and
other low-current or medium-voltage loads.
The device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Data transfers through both the shift and
storage register clock (SRCK) and the register
clock (RCK), respectively. The device transfers
data out the serial output (SER OUT) port on the
rising edge of SRCK. The storage register
transfers data to the output buffer when shift
register clear (CLR) is high. When CLR is low, the
input shift register is cleared. When output enable
(G) is held high, all data in the output buffer is held
low and all drain output are off. When G is held
low, data from the storage register is transparent
to the output buffer. When data in the output
buffers is low, the DMOS transistor outputs are off.
When data is high, the DMOS transistor outputs
have sink-current capability. The SER OUT allows
for cascading of the data from the shift register to
additional devices.
Output are low-side, open-drain DMOS transistors
with output ratings of 33V and 100mA continuous
sink-current capability. Each output provides a
250 mA maximum current limit at T
C
= 25C. The
current
limit
decreases
as
the
junction
temperature
increases
for
additional
device
protection. The device also provides up to 1.5KV
of
ESD
protection
when
tested
using
the
human-body model and 200V machine model.
The STPIC6C595 is characterized for operation
over the operating case temperature range of
-40C to 125C.
ORDERING CODES
Type
Package
Comments
STPIC6C595M
SO-16 (Tube)
50parts per tube / 20tube per box
STPIC6C595MTR
SO-16 (Tape & Reel)
2500 parts per reel
STPIC6C595TTR
TSSOP16 (Tape & Reel)
2500 parts per reel
STPIC6C595
POWER LOGIC 8-BIT SHIFT REGISTER
SOP
TSSOP
STPIC6C595
2/14
Figure 1 : Logic Symbol And Pin Configuration
Figure 2 : Input And Output Equivalent Circuits
STPIC6C595
3/14
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied.
THERMAL DATA
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
CC
Logic Supply Voltage (See Note 1)
7
V
V
I
Logic Input Voltage Range
-0.3 to 7
V
V
DS
Power DMOS Drain to Source Voltage (See Note 2)
33
V
I
DS
Continuous Source to Drain Diode Anode Current
250
mA
I
DS
Pulsed Source to Drain Diode Anode Current (See Note 3)
500
mA
I
D
Pulsed Drain Current, Each Output, All Output ON (T
C
=25C)
250
mA
I
D
Continuous Current, Each Output, All Output ON (T
C
=25C)
100
mA
I
D
Peak Drain Current Single Output (T
C
=25C) (See Note 3)
250
mA
E
AS
Single Pulse Avalanche Energy (See Figure11 and 12)
30
mJ
I
AS
Avalanche Current (See Note 4 and figure 17)
200
mA
P
d
Continuous total dissipation (T
C
25C)
1087
mW
P
d
Continuous total dissipation (T
C
= 125C)
217
mW
T
J
Operating Virtual Junction Temperature Range
-40 to +150
C
T
C
Operating Case Temperature Range
-40 to +125
C
T
stg
Storage Temperature Range
-65 to +150
C
T
L
Lead Temperature 1.6mm (1/16inch) from case for 10 seconds
260
C
Symbol
Parameter
Value
Unit
R
thj-amb
Thermal Resistance Junction-ambient
115
C/W
Symbol
Parameter
Min.
Max.
Unit
V
CC
Logic Supply Voltage
4.5
5.5
V
V
IH
High Level Input Voltage
0.85V
CC
V
CC
V
V
IL
Low Level Input Voltage
0
0.15V
CC
V
I
DP
Pulse Drain Output Current (T
C
=25C, V
CC
=5V,all outputs ON)
(see note 3, 5 and figure 15)
250
mA
t
su
Set-up Time, SER IN High Before SRCK
(see Figure 6 and 8)
20
ns
t
h
Hold Time, SER IN High Before G
(see Figure 6, 7, 8)
20
ns
t
W
Pulse Duration (see Figure 8)
40
ns
T
C
Operating Case Temperature
-40
125
C
STPIC6C595
4/14
DC CHARACTERISTICS (V
CC
=5V, T
C
= 25C, unless otherwise specified.)
SWITCHING CHARACTERISTICS (V
CC
=5V, T
C
= 25C, unless otherwise specified.)
Note 1: All Voltage value are with respect to GND
Note 2: Each power DMOS source is internally connected to GND
Note 3: Pulse duration
100
s and duty cycle
2%
Note 4: Drain Supply Voltage = 15V, starting junction temperature (T
JS
) = 25C. L = 1.5H and I
AS
= 200mA (See Fig. 11 and 12)
Note 5: Technique should limit T
J
- T
C
to 10C maximum
Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.
Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5V at T
C
= 85C.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSX
Drain-to-Source breakdown
Voltage
I
D
= 1mA
33
37
V
V
SD
Source-to-Drain Diode
Forward Voltage
I
F
= 100 mA
0.85
1.2
V
V
OH
High Level Output Voltage
SER OUT
I
OH
= -20
A
V
CC
= 4.5V
4.4
4.49
V
I
OH
= -4 mA
V
CC
= 4.5V
4
4.2
V
V
OL
Low Level Output Voltage
SER OUT
I
OH
= 20
A
V
CC
= 4.5V
0.005
0.1
V
I
OH
= 4 mA
V
CC
= 4.5V
0.3
0.5
V
I
IH
High Level Input Current
V
CC
= 5.5V
V
I
= V
CC
1
A
I
IL
Low Level Input Current
V
CC
= 5.5V
V
I
= 0
-1
A
I
CC
Logic Supply Current
V
CC
= 5.5V All outputs OFF or ON
20
200
A
I
CC(FRQ)
Logic Supply Current at
Frequency
f
SRCK
= 5MHz
C
L
= 30pF
All outputs OFF
(See Figg. 6, 18 and 19)
0.2
2
mA
I
N
Nominal Current
V
DS(on)
= 0.5V
I
N
= I
D
T
C
=85C
(See Note 5, 6, 7)
90
mA
I
DSX
Off-State Drain Current
V
DS
= 30V
V
CC
= 5.5V
0.3
5
A
V
DS
= 30V
V
CC
=5.5V or 0V
T
C
=125C
0.6
8
A
R
DS(on)
Static Drain Source ON
State Resistance (See Note
5, 6 and figg. 14, 16)
I
D
= 50mA
V
CC
= 4.5V
4.5
6
I
D
= 50mA
V
CC
= 4.5V
T
C
=125C
6.5
9
I
D
= 100mA
V
CC
= 4.5V
4.5
6
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
PHL
Propagation Dealy Time,
High to Low Level Output
from G
C
L
= 30pF
I
D
= 75mA
(See Figg. 4, 5, 6,7, 20)
80
ns
t
PLH
Propagation Dealy Time,
Low to High Level Output
from G
130
ns
t
r
Rise Time, Drain Output
60
ns
t
f
Fall Time, Drain Output
50
ns
t
pd
propagation Delay Time
20
ns
t
a
Reverse Recovery Current
Rise Time
I
F
= 100mA
di/dt = 10A/
s
(See Note 5, 6 and Fig. 9 and 10)
39
ns
t
rr
Reverse Recovery Time
115
ns
STPIC6C595
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Figure 3 : Logic Diagram
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