STPR820D/F
October 1999 - Ed: 2B
ULTRA-FAST RECOVERY RECTIFIER DIODES
I
F(AV)
8 A
V
RRM
200 V
Tj (max)
150
C
V
F
(max)
0.99 V
trr (max)
30 ns
MAIN PRODUCTS CHARACTERISTICS
Low cost single chip rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in TO-220AC and ISOWATT220AC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protectionapplications.
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
= 0.5
TO-220AC
Tc = 120
C
8
A
ISOWATT220AC
Tc = 100
C
I
FSM
Surge non repetitive forward current
Tp = 10 ms
Sinusoidal
80
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
+ 150
SUITED FOR SMPS
LOW LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
FEATURES
K
A
ISOWATT220AC
STPR820F
K
A
TO-220AC
STPR820D
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Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
50
A
Tj = 100
C
0.6
mA
V
F
**
Forward voltage drop
Tj = 125
C
I
F
= 8 A
0.99
V
Tj = 125
C
I
F
= 16 A
1.20
Tj = 25
C
I
F
= 16 A
1.25
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2 %
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Test conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
30
ns
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
max
tr = 10 ns
20
V
FP
T
j
= 25
C
I
F
= 1A
tr = 10 ns
3
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AC
3.0
C/W
ISOWATT220AC
5.5
THERMAL RESISTANCES
Fig. 2: Peak current versus form factor.
Fig. 1: Average forward power dissipation versus
average forward current.
STPR820D/F
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Fig.
3:
Average
current
versus
ambient
temperature.
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum
values)
(TO-220AC).
Fig. 6: Non repetitive surge peak forward current
versus overload duration (maximum values)
(ISOWATT220AC).
Fig.
4:
Average
current
versus
ambient
temperature.
Fig. 8: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AC).
Fig. 7: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AC).
STPR820D/F
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Fig. 9: Forward voltage drop versus forward
current.
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 11: Recovery charge versus dI
F
/dt.
Fig. 12: Peak reverse current versus dI
F
/dt.
Fig. 13: Dynamic parameters versus junction
temperature.
STPR820D/F
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