STPS1045D/F
September 1999 - Ed: 3B
POWER SCHOTTKY RECTIFIER
I
F(AV)
10 A
V
RRM
45 V
V
F
0.57 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
INSULATED PACKAGE:ISOWATT220AC
Insulating voltage = 2000V DC
Capacitance = 12pF
FEATURES AND BENEFITS
Single chip Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
This device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity pro-
tection applications.
DESCRIPTION
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AC
Tc = 150C
10
A
ISOWATT220AC
Tc = 145C
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp = 2
s
F = 1KHz
1
A
Tstg
Storage temperature range
- 65 to + 175
C
Tj
Maximum junction temperature
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values)
ISOWATT220AC
STPS1045F
A
K
A
K
TO-220AC
STPS1045D
A
K
1/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AC
2.2
C/W
ISOWATT220AC
4.5
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 125
C
15
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.84
V
Tj = 125
C
I
F
= 15 A
0.72
Tj = 125
C
I
F
= 7.5 A
0.57
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
< 2 %
** tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.015 I
F
2
(RMS)
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
TO220AC
ISOWATT220
T
=tp/T
tp
Fig. 2: Average current versus ambient tempera-
ture (
: 0.5).
STPS1045D/F
2/5
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
t(s)
IM(A)
Tc=50C
Tc=100C
Tc=150C
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 4-1: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
t(s)
IM(A)
Tc=50C
Tc=100C
Tc=150C
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 4-2: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC).
0
5
10
15
20
25
30
35
40
45
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=150C
Tj=100C
Tj=125C
Tj=25C
Tj=50C
Tj=75C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
1
2
5
10
20
50
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
STPS1045D/F
3/5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Tj=125C
(Typical values)
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values).
PACKAGE MECHANICAL DATA
TO-220AC
A
C
D
E
M
L7
H2
I
L5
L6
L9
L4
G
F1
F
L2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam. I
3.75
3.85
0.147
0.151
STPS1045D/F
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOWATT220AC
F
G
F1
H
D
E
A
B
L7
Diam
L2
L6
L3
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.40
2.75
0.094
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
H
10.00
10.40 0.394
0.409
L2
16.00
0.630
L3
28.60
30.60 1.125
1.205
L6
15.90
16.40 0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.0126
STPS1045D/F
5/5
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