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STPS10H100CT/CG/CR/CFP
July 2003 - Ed: 3F
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 5 A
V
RRM
100 V
Tj
175C
V
F
(max)
0.61 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT
s
LOW
LEAKAGE
CURRENT
AT
HIGH
TEMPERATURE
s
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D
2
PAK and I
2
PAK.
DESCRIPTION
TO-220AB
STPS10H100CT
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
Tc = 165C
per diode
per device
5
10
A
TO-220FPAB
Tc = 160C
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
7200
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
A1
A2
K
D
2
PAK
STPS10H100CG
K
A1
A2
K
I
2
PAK
STPS10H100CR
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
A2
K
TO-220FPAB
STPS10H100CFP
STPS10H100CT/CG/CR/CFP
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
D2PAK / I2PAK
TO-220AB
Per diode
2.2
C/W
Total
1.3
R
th (c)
Coupling
0.3
R
th (j-c)
Junction to case
TO-220FPAB
Per diode
4.5
C/W
Total
3.5
R
th (c)
Coupling
2.5
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
3.5
A
Tj = 125C
1.3
4.5
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 5 A
0.73
V
Tj = 125C
0.57
0.61
Tj = 25
C
I
F
= 10 A
0.85
Tj = 125C
0.66
0.71
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.51 x I
F(AV)
+ 0.02 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.2
= 0.5
= 1
= 0.05
= 0.1
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Tamb(C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
DPAK/IPAK/TO-220AB
TO-220FPAB
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
STPS10H100CT/CG/CR/CFP
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
IM(A)
Tc=50C
Tc=75C
Tc=125C
t(s)
I
M
t
=0.5
Fig. 5-1:
Non repetitive surge peak forward
current
versus
overload
duration
(maximum
values, per diode)
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=125C
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)(TO-220FPAB)
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (per
diode).(TO-220FPAB)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
STPS10H100CT/CG/CR/CFP
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10.0
100.0
IFM(A)
Tj=125C
Typical values
Tj=125C
Tj=25C
Tj=150C
Typical values
VFM(V)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35m)
0
10
20
30
40
50
60
70
80
90
100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(A)
Tj=125C
Tj=25C
Tj=150C
Tj=100C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
10
100
1000
C(pF)
F=1MHz
Tj=25C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
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STPS10H100CT/CG/CR/CFP
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
FOOT PRINT in millimeters
8.90
3.70
1.30
5.08
16.90
10.30
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