STPS10L40CT/CG/CF
July 1999 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB and
D
2
PAK, these devices are intended for use in low
voltage, high frequency inverters, free-wheeling
and polarity protection applications.
DESCRIPTION
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
AVALANCHERATED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
Tc = 135
C
= 0.5
Per diode
Per device
5
10
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
150
A
I
RRM
Repetitive peak reverse current
tp=2
s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s
square
2
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2x5 A
V
RRM
40 V
Tj (max)
150
C
V
F
(max)
0.46 V
MAIN PRODUCTS CHARACTERISTICS
D
2
PAK
STPS10L40CG
A1
K
A2
A2
K
A1
K
A1
A2
TO-220AB
STPS10L40CT
ISOWATT220AB
STPS10L40CF
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25
C
V
R
= V
RRM
0.2
mA
Tj = 100
C
8
25
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 5 A
0.53
V
Tj = 125
C
I
F
= 5 A
0.36
0.46
Tj = 25
C
I
F
= 10 A
0.67
Tj = 125
C
I
F
= 10 A
0.49
0.59
Pulse test : * tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.33 x I
F(AV)
+ 0.026 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB
D
2
PAK
Per diode
Total
3
1.7
C/W
R
th (c)
Coupling
0.35
R
th (j-c)
Junction to case
ISOWATT220AB
Per diode
Total
5
3.8
C/W
R
th (c)
Coupling
2.5
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av) (A)
PF(av)(W)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
1
2
3
4
5
6
IF(av)(A)
Rth(j-a)=15
C/W
Rth(j-a)=Rth(j-c)
Tamb(
C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
STPS10L40CT/CG/CF
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1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
IM(A)
Tc=25
C
Tc=125
C
Tc=75
C
t(s)
I
M
t
=0.5
Fig. 3-1:
Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB and D
2
PAK).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AB and D
2
PAK).
0
5
10
15
20
25
30
35
40
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
Tj=100
C
Tj=25
C
Tj=150
C
VR(V)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
IM(A)
Tc=25
C
Tc=125
C
Tc=75
C
I
M
t
=0.5
t(s)
Fig. 3-2:
Non repetitive surge peak forward
current versus
overload duration (maximum
values, per diode) (ISOWATT220AB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AB).
1
2
5
10
20
50
10
100
1000
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS10L40CT/CG/CF
3/6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1.0
10.0
100.0
IFM(A)
VFM(V)
Tj=25
C
Tj=150
C
Typical values
Tj=125
C
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm )
Rth(j-a) (
C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit boardFR4, copperthickness: 35
m)( D
2
PAK).
STPS10L40CT/CG/CF
4/6
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESSTHAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
STPS10L40CT/CG/CF
5/6
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