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STPS10L60CF/CFP
July 2003 - Ed: 3C
POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters.
Packaged in ISOWATT220AB, TO-220FPAB this
device is intended for use in high frequency
inverters.
DESCRIPTION
s
LOW FORWARD VOLTAGE DROP
s
NEGLIGIBLE SWITCHING LOSSES
s
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average
forward current
ISOWATT220AB
TO220FPAB
Tc =130C
= 0.5
Per diode
Per device
5
10
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4000
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 5 A
V
RRM
60 V
Tj (max)
150 C
V
F
(max)
0.52 V
MAIN PRODUCT CHARACTERISTICS
A1
K
A2
ISOWATT220AB
STPS10L60CF
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
A2
K
TO-220FPAB
STPS10L60CFP
STPS10L60CF/CFP
2/5
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
220
A
Tj = 125C
45
60
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 5 A
0.55
V
Tj = 125C
I
F
= 5 A
0.43
0.52
Tj = 25
C
I
F
= 10 A
0.67
Tj = 125C
I
F
= 10 A
0.55
0.64
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.4x I
F(AV)
+ 0.024 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case ISOWATT220AB TO-220FPAB
Per Diode
Total
4.5
3.5
C/W
R
th (c)
Coupling
2.5
C/W
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.05
= 1
= 0.1
= 0.2
= 0.5
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
1
2
3
4
5
6
IF(av)(A)
T
=tp/T
tp
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
Fig.
2:
Average
current
versus
ambient
temperature (
=0.5) (per diode).
STPS10L60CF/CFP
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1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
IM(A)
I
M
t
=0.5
t(s)
Tc=25C
Tc=125C
Tc=75C
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
0
5
10
15
20
25
30
35
40
45
50
55
60
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
3E+2
IR(mA)
VR(V)
Tc=25C
Tc=75C
Tc=100C
Tc=125C
Tc=150C
Tc=50C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
10
100
100
200
500
1000
C(pF)
VR(V)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS10L60CF/CFP
4/5
s
Cooling method: C
s
Recommended torque value: 0.55 m.N
s
Maximum torque value: 0.70 m.N
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L2
16.00 Typ.
0.630 Typ.
L3
28.60
30.60
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.1
1.0
10.0
100.0
IFM(A)
VFM(V)
Tj=25C
Tj=150C
(typical values)
Tj=125C
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
STPS10L60CF/CFP
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS10L60CF
STPS10L60CF
ISOWATT220AB
2.08g
50
Tube
STPS10L60CF
STPS10L60CF
ISOWATT220AB
2.08g
1000
Bulk
STPS10L60CFP
STPS10L60CFP
TO-220FPAB
2 g
50
Tube
s
Epoxy meets UL94,V0
PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
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