ChipFind - документация

Электронный компонент: STPS1545CFP

Скачать:  PDF   ZIP
1/8
STPS1545CT/CF/CG/CFP/CR
July 2003 - Ed: 5F
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 7.5 A
V
RRM
45 V
Tj (max)
175 C
V
F
(max)
0.57 V
MAIN PRODUCT CHARACTERISTICS
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
INSULATED
PACKAGE:
ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC
to DC converters.
Packaged either in TO-220AB, ISOWATT220AB,
TO-220FPAB, D
2
PAK or I
2
PAK, this device is es-
pecially intended for use in low voltage, high fre-
quency inverters, free wheeling and polarity
protection applications.
DESCRIPTION
D
2
PAK
STPS1545CG
A2
A1
K
A1
A2
K
TO-220AB
STPS1545CT
A1
A2
K
ISOWATT220AB
STPS1545CF
A1
A2
K
A1
A2
K
TO-220FPAB
STPS1545CFP
A1
A2
K
I
2
PAK
STPS1545CR
STPS1545CT/CF/CG/CFP/CR
2/8
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
Per diode
Total
3.0
1.7
C/W
ISOWATT220AB / TO-220FPAB
Per diode
Total
5.5
4.2
R
th (c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.35
ISOWATT220AB / TO-220FPAB
2.9
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
100
A
Tj = 125C
5
15
mA
V
F
*
Forward voltage drop
Tj = 125
C
I
F
= 7.5 A
0.5
0.57
V
Tj = 25
C
I
F
= 15 A
0.84
Tj = 125C
I
F
= 15 A
0.65
0.72
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test :
* tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.020 I
F
2
(RMS)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB / D
2
PAK
I
2
PAK
Tc = 157C
Per diode
7.5
A
ISOWATT220AB
TO-220FPAB
Tc = 130C
Per device
15
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
150
A
I
RRM
Repetitive peak reverse current
tp = 2 s square
F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
2700
W
T
stg
Storage temperature range
-65 to +175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS1545CT/CF/CG/CFP/CR
3/8
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
t(s)
IM(A)
Tc=100C
Tc=50C
Tc=150C
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB and D
2
PAK).
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
TO-220AB
DPAK
ISOWATT220AB
TO-220FPAB
Rth(j-a)=40C/W
T
=tp/T
tp
Fig.
2:
Average
current
versus
ambient
temperature (
= 0.5, per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=100C
Tc=50C
Tc=150C
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1545CT/CF/CG/CFP/CR
4/8
0
5
10
15
20
25
30
35
40
45
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
VR(V)
IR(A)
Tj=150C
Tj=100C
Tj=125C
Tj=75C
Tj=50C
Tj=25C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Tj=125C
Typical values
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35m).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (TO-220AB and D
2
PAK).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (ISOWATT220AB, TO-220FPAB).
STPS1545CT/CF/CG/CFP/CR
5/8
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT DIMENSIONS (in millimeters)
STPS1545CT/CF/CG/CFP/CR
6/8
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
STPS1545CT/CF/CG/CFP/CR
7/8
PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
B
2.50
2.70
0.098
0.106
D
2.50
2.75
0.098
0.108
E
0.40
0.70
0.016
0.028
F
0.75
1.00
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.40
2.70
0.094
0.106
H
10.00
10.40
0.394
0.409
L2
16.00 typ.
0.630 typ.
L3
28.60
30.60
1.125
1.205
L4
9.80
10.60
0.386
0.417
L6
15.90
16.40
0.626
0.646
L7
9.00
9.30
0.354
0.366
Diam
3.00
3.20
0.118
0.126
STPS1545CT/CF/CG/CFP/CR
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS1545CT
STPS1545CT
TO-220AB
2.23 g.
50
Tube
STPS1545CF
STPS1545CF
ISOWATT220AB
2.08 g.
50
Tube
STPS1545CFP
STPS1545CFP
TO-220FPAB
2.0 g
50
Tube
STPS1545CG
STPS1545CG
D
2
PAK
1.48 g.
50
Tube
STPS1545CG-TR STPS1545CG
D
2
PAK
1.48 g.
1000
Tape & reel
STPS1545CR
STPS1545CR
I
2
PAK
1.49 g
50
Tube
s
Cooling method: by conduction (C)
s
Expoxy meets UL94,V0
PACKAGE MECHANICAL DATA
I
2
PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055