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STPS15L45CB
July 2003 - Ed : 2A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in
low
voltage,
high
frequency
inverters,
free-wheeling and polarity protection applications.
DESCRIPTION
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW FORWARD VOLTAGE DROP
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
Tc = 140C
= 0.5
Per diode
7.5
A
Per device
15
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
I
RRM
Peak repetitive reverse current
tp=2 s square F=1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
3700
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 7.5 A
V
RRM
45 V
Tj (max)
150 C
V
F
(max)
0.46 V
MAIN PRODUCTS CHARACTERISTICS
A2
A1
K
DPAK
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS15L45CB
2/4
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
1
mA
Tj = 125C
23
45
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 7.5 A
0.52
V
Tj = 125C
I
F
= 7.5 A
0.40
0.46
Tj = 25
C
I
F
= 12 A
0.60
Tj = 125C
I
F
= 12 A
0.49
0.57
Tj = 25
C
I
F
= 15 A
0.64
Tj = 125C
I
F
= 15 A
0.53
0.63
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.29 x I
F(AV)
+ 0.023 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
4
2.4
C/W
R
th(c)
Coupling
0.7
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
1
2
3
4
5
6
7
8
9
10
IF(av)(A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
Tamb(C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=70C/W
IF(av)(A)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS15L45CB
3/4
0
10
20
30
40
50
60
70
80
90
100
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
Tc=25C
Tc=75C
Tc=125C
IM(A)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
5
10
15
20
25
30
35
40
45
VR(V)
Tj=150C
Tj=125C
Tj=25C
Tj=100C
Tj=75C
Tj=50C
IR(mA)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VFM(V)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
IFM(A)
Fig. 9: Forward voltage drop versus forward current.
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
S(cm)
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu = 35m).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
0.1
1.0
10.0
1
10
100
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(nF)
Fig. 8 Junction capacitance versus reverse voltage
applied (typical values).
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STPS15L45CB
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
PACKAGE MECHANICAL DATA
DPAK
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS15L45CB
S15L45C
DPAK
0.30 g
75
Tube
STPS15L45CB-TR
S15L45C
DPAK
0.30 g
2500
Tape & reel
s
EPOXY MEETS UL94,V0
6.7
6.7
3
3
1.6
1.6
2.3
2.3
FOOTPRINT (dimensions in mm)
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