STPS16045TV
June 1999 - Ed: 3A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 80 A
V
RRM
45 V
Tj (max)
150
C
V
F
(max)
0.69 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
DESCRIPTION
ISOTOP
TM
A1
K1
A2
K2
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
125
A
I
F(AV)
Average forward current
Tc = 75
C
= 0.5
Per diode
Per device
80
160
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
900
A
I
RRM
Repetitive peak reverse current
tp = 2
s square
F = 1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
5
A
T
stg
Storage temperature range
- 55 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP is a trademark of STMicroelectronics
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/4
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
1
C/W
Total
0.55
R
th (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
1
mA
Tj = 125
C
43
150
V
F
*
Forward voltage drop
Tj = 125
C
I
F
= 80 A
0.62
0.69
V
Tj = 25
C
I
F
= 160 A
0.95
Tj = 125
C
I
F
= 160 A
0.8
0.90
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.48 x I
F(AV)
+ 0.00262 x I
F
2
(RMS)
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
Tamb(
C)
IF(av)(A)
Rth(j-a)=5
C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average current versus case temperature
(
= 0.5, per diode).
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
STPS16045TV
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1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode).
0
5
10
15
20
25
30
35
40
45
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
5E+5
VR(V)
IR(
A)
Tj=150
C
Tj=100
C
Tj=125
C
Tj=75
C
Tj=50
C
Tj=25
C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
0.1
1.0
10.0
VR(V)
C(nF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
10
100
1000
VFM(V)
IFM(A)
Typical values
Tj=125
C
Tj=125
C
Tj=25
C
Fig. 7:
Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
300
350
400
450
t(s)
IM(A)
Tc=75
C
Tc=100
C
Tc=125
C
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
STPS16045TV
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS16045TV STPS16045TV
ISOTOP
28 g.
without screws
10
Tube
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
STPS16045TV
4/4
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