STPS160H100TV
July 1999 - Ed: 2A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 80 A
V
RRM
100 V
Tj (max)
150
C
V
F
(max)
0.68 V
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHERATED
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V
(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
Package d in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
DESCRIPTION
ISOTOP
TM
K2
K1
A2
A1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
180
A
I
F(AV)
Average forward current
Tc = 110
C
= 0.5
Per diode
Per device
80
160
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
1000
A
I
RRM
Repetitive peak reverse current
tp = 2
s square F = 1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
10
A
T
stg
Storage temperature range
- 55 to+ 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/4
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per leg
0.9
C/W
Total
0.5
C/W
R
th (c)
Coupling
0.14
C/W
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage Current
Tj = 25
C
V
R
= V
RRM
40
A
Tj = 125
C
13
50
mA
V
F
**
Forward Voltage drop
Tj = 25
C
I
F
= 60 A
0.75
V
Tj = 125
C
I
F
= 60 A
0.59
0.63
Tj = 25
C
I
F
= 80 A
0.80
Tj = 125
C
I
F
= 80 A
0.63
0.68
Tj = 25
C
I
F
= 120 A
0.87
Tj = 125
C
I
F
= 120 A
0.69
0.74
Tj = 25
C
I
F
= 160 A
0.92
Tj = 125
C
I
F
= 160 A
0.75
0.80
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.56 x I
F(AV)
+ 0.0015 x I
F
2
(RMS)
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
IF(av) (A)
PF(av)(W)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
20
40
60
80
100
Tamb(
C)
IF(av)(A)
Rth(j-a)=2
C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS160H100TV
2/4
1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
600
t(s)
IM(A)
Tc=50
C
Tc=90
C
I
M
t
=0.5
Fig. 3: Non repetitive surgepeak forward current ver-
sus overloadduration(maximum values, per diode).
0
10
20
30
40
50
60
70
80
90
100
1E-3
1E-2
1E-1
1E+0
1E+1
5E+1
VR(V)
IR(mA)
Tj=125
C
Tj=25
C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
500
VFM(V)
IFM(A)
Tj=125
C
Tj=25
C
Fig. 7: Forward voltage drop versus forward cur-
rent (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.1
= 0.2
= 0.5
T
=tp/T
tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1
2
5
10
20
50
100
0.1
1.0
10.0
VR(V)
C(nF)
F=1MHz
Tj=25
C
Fig. 6: Junction capacitance versus reverse volt-
age applied (typical values, per diode) .
STPS160H100TV
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOTOP
TM
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS160H100TV STPS160H100TV
ISOTOP
27g
without screws
10
Tube
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
STPS160H100TV
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