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Электронный компонент: STPS16150CT

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STPS16150CT/CG/CR
July 2003 - Ed: 6C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 8 A
V
RRM
150 V
Tj
175C
V
F
(max)
0.75 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high
frequency
Switched
Mode
Power
Supplies.
DESCRIPTION
TO-220AB
STPS16150CT
K
A2
A1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
Tc = 150C per diode
per device
8
16
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
150
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4700
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
D
2
PAK
STPS16150CG
K
A2
A1
A1
A2
K
K
A1
A2
I
2
PAK
STPS16150CR
STPS16150CT/CG/CR
2/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
Per diode
3
C/W
Total
1.8
R
th (c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.6
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
3.0
A
Tj = 125C
4.0
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 8 A
0.92
V
Tj = 125C
I
F
= 8 A
0.70
0.75
Tj = 25
C
I
F
= 16 A
1
Tj = 125C
I
F
= 16 A
0.8
0.86
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.014 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
7
8
9
Tamb(C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15C/W
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS16150CT/CG/CR
3/5
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=125C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 46 Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0
25
50
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=125C
Tj=25C
Tj=150C
Tj=75C
Tj=175C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
10
100
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
0.0 0.2
0.4 0.6
0.8 1.0
1.2
1.4 1.6
1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125C
Typical values
Tj=125C
Tj=25C
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
S(cm)
Rth(j-a) (C/W)
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board, copper thckness: 35m) (STPS16150CG only).
STPS16150CT/CG/CR
4/5
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
PACKAGE MECHANICAL DATA
I
2
PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
STPS16150CT/CG/CR
5/5
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS16150CT
STPS16150CT
TO-220AB
2.2 g
50
Tube
STPS16150CG
STPS16150CG
D
2
PAK
1.48 g
50
Tube
STPS16150CG-TR
STPS16150CG
D
2
PAK
1.48 g
1000
Tape & reel
STPS16150CR
STPS16150CR
I
2
PAK
1.49 g
50
Tube
s
Epoxy meets UL94, V0
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
1.25
1.40
0.049 0.055
C
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
1.75 0.055
0.069
R
0.40
0.016
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)