STPS1L30A/U
August 1999 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
I
F(AV)
1 A
V
RRM
30 V
Tj (max)
150 C
V
F
(max)
0.3 V
MAIN PRODUCT CHARACTERISTICS
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
YIELD IN THE APPLICATIONS
SURFACE MOUNT MINIATURE PACKAGE
FEATURES AND BENEFITS
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
DESCRIPTION
SMB
STPS1L30U
JEDEC DO-214AA
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
30
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 135C
= 0.5
1
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp = 2
s F = 1kHz square
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
1
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values)
SMA
STPS1L30A
JEDEC DO-214AC
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/5
Symbol
Parameter
Value
Unit
R
th (j-l)
Junction to lead
SMA
30
C/W
SMB
25
THERMAL RESISTANCES
Symbol
Parameters
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage Current
Tj = 25
C
V
R
= V
RRM
200
A
Tj = 100
C
6
15
mA
V
F
*
Forward Voltage drop
Tj = 25
C
I
F
= 1 A
0.395
V
Tj = 125
C
0.26
0.3
Tj = 25
C
I
F
= 2 A
0.445
Tj = 125C
0.325
0.375
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.225 x I
F(AV)
+ 0.075 I
F
2
(RMS)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
IF(av) (A)
PF(av)(W)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=120C/W
Rth(j-a)=100C/W
T
=tp/T
tp
Tamb(C)
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
IM(A)
Ta=25C
Ta=100C
Ta=50C
t(s)
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(SMA).
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
IM(A)
Ta=25C
Ta=100C
Ta=50C
t(s)
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(SMB).
STPS1L30A/U
2/5
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
Tj=125C
Tj=25C
Tj=100C
Tj=150C
VR(V)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
1
2
5
10
20
30
10
100
500
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.10
1.00
10.00
IFM(A)
Tj=100C
Tj=150C
Tj=25C
VFM(V)
Fig. 7-1: Forward voltage drop versus forward cur-
rent (typical values, high level).
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
Fig. 4-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35
m, recommended
pad layout) (SMB).
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
tp(s)
T
=tp/T
tp
Fig. 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35
m, recommended
pad layout) (SMA).
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IFM(A)
Tj=125C
Typical values
Tj=150C
Tj=100C
Tj=25C
VFM(V)
Fig. 7-2: Forward voltage drop versus forward cur-
rent (maximum values, low level).
STPS1L30A/U
3/5
0
1
2
3
4
5
0
20
40
60
80
100
120
140
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 8-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35
m)
(SMA).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
20
40
60
80
100
120
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 8-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35
m) (SMB).
PACKAGE MECHANICAL DATA
SMA
FOOT PRINT DIMENSIONS (in millimeters)
2.40
1.65
1.45
1.45
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
STPS1L30A/U
4/5
PACKAGE MECHANICAL DATA
SMB
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
1.52
2.75
2.3
1.52
FOOT PRINT DIMENSIONS (in millimeters)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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proval of STMicroelectronics.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS1L30U
G23
SMB
0.107g
2500
Tape & reel
STPS1L30A
GB3
SMA
0.068g
5000
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
STPS1L30A/U
5/5
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