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STPS1L40M
July 2003 - Ed : 3A
LOW DROP POWER SCHOTTKY RECTIFIER
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW
FORWARD
VOLTAGE
DROP
FOR
HIGHER
EFFICIENCY
&
EXTENDED
BATTERY LIFE
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in ST Mite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA's, printers) as well chargers and PCMCIA
cards.
DESCRIPTION
ST Mite
(DO-216AA)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
2
A
I
F(AV)
Average forward current
Tc = 140C
= 0.5
1
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
1200
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature*
150
C
dV/dt
Critical rate of rise of reverse voltage (rated Vr, Tj = 25C)
10000
V/s
ABSOLUTE RATINGS (limiting values)
A
C
I
F(AV)
1 A
V
RRM
40 V
Tj (max)
150C
V
F
(max)
0.40 V
MAIN PRODUCT CHARACTERISTICS
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS1L40M
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Symbol
Parameter
Tests conditions
Value
Unit
Min.
Typ.
Max.
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
0.021
0.063
mA
Tj = 85C
1.3
4.0
Tj = 25C
V
R
= 20 V
0.007
0.021
Tj = 85C
0.49
1.5
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 1A
0.40
0.46
V
Tj = 85C
0.35
0.40
Tj = 25C
I
F
= 3 A
0.52
0.60
Tj= 85C
0.50
0.58
Pulse test :
* tp
380 s,
2%
To evaluate the conduction losses use the following equation :
P = 0.34 x I
F(AV)
+ 0.07 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-c)
*
Junction to case
20
C/W
R
th (j-a)
*
Junction to ambient
250
C/W
* Monted with minimum recommended pad size, PC board FR4.
THERMAL RESISTANCE
STPS1L40M
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0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
(A)
F(AV)
P
(W)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Conduction losses versus average current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
T
(C)
amb
R
th(j-a)
=R
th(j-c)
R
th(j-a)
=270C/W
I
(A)
F(AV)
Fig. 2: Average forward current versus ambient
temperature (
= 0.5)
0
2
4
6
8
10
12
14
16
18
20
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
I
M
t
=0.5
I (A)
M
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
t (s)
P
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1L40M
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10
100
1000
1
10
100
V (V)
R
F=1MHz
V
osc
=30mV
T
j
=25C
C(pF)
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=85C
(Maximum values)
T
j
=85C
(Maximum values)
T
j
=85C
(Typical values)
T
j
=85C
(Typical values)
I
(A)
FM
Fig. 10: Forward voltage drop versus forward
current.
0
50
100
150
200
250
0
20
40
60
80
100
120
140
160
180
200
S(mm)
R
(C/W)
th(j-a)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35m, typical values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
5
10
15
20
25
30
35
40
V (V)
R
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=100C
T
j
=75C
T
j
=50C
I (mA)
R
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
25
50
75
100
125
150
Tj(C)
V
R
=40V
I (mA)
R
Fig. 8: Reverse leakage current versus junction
temperature (typical values).
STPS1L40M
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PACKAGE MECHANICAL DATA
ST Mite
C
L2
L
A1
R1
R
0 to 6
b
H
b2
D
L3
A
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
0.85
1.00
1.15 0.033 0.039 0.045
A1
0.10
0.004
b
0.40
0.65 0.016
0.025
b2
0.70
1.00 0.027
0.039
c
0.10
0.25 0.004
0.010
D
1.75
1.90
2.05 0.069 0.075 0.081
E
1.75
1.90
2.05 0.069 0.075 0.081
H
3.60
3.75
3.90 0.142 0.148 0.154
L
0.50
0.63
0.80 0.047 0.025 0.031
L2
1.20
1.35
1.50 0.047 0.053 0.059
L3
0.50 ref (Typ.)
0.019 ref (Typ.)
R
0.07
0.003
R1
0.07
0.003
Note:
The anode is connected to the longer tab
The cathode is connected to the shorter tab (heatsink)
2.67
2.54
0.762
1.27
0.635
FOOTPRINT (dimensions in mm)
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS1L40M
1L4
ST Mite
15.5 mg
12000
Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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