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STPS20150CT/CG/CR/CFP
July 2003 - Ed: 6D
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 10 A
V
RRM
150 V
T
j
175C
V
F
(max)
0.75 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high
frequency
Switched
Mode
Power
Supplies.
DESCRIPTION
TO-220FPAB
STPS20150CFP
A1
K
A2
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AB
D
2
PAK / I
2
PAK
Tc = 155C
Per diode
10
A
TO-220FPAB
Tc = 135C
Per device
20
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
6700
W
T
stg
Storage temperature range
- 65 to + 175
C
T
j
Maximum operating junction temperature
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
D
2
PAK
STPS20150CG
K
A2
A1
A1
A2
K
K
K
A1
A2
I
2
PAK
STPS20150CR
TO-220AB
STPS20150CT
A1
A2
K
STPS20150CT/CG/CR/CFP
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Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
Per diode
2.2
C/W
TO-220FPAB
4.5
TO-220AB / D
2
PAK / I
2
PAK
Total
1.3
TO-220FPAB
3.5
R
th(c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.3
TO-220FPAB
2.5
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
5.0
A
Tj = 125C
5.0
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 10 A
0.92
V
Tj = 125C
I
F
= 10 A
0.69
0.75
Tj = 25
C
I
F
= 20 A
1
Tj = 125C
I
F
= 20 A
0.79
0.86
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.011 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
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0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
9
10
I
(A)
F(AV)
P
(W)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
1
2
3
4
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
T
(C)
amb
I
(A)
F(AV)
T
=tp/T
tp
R
=R
(TO-220AB, I PAK and D PAK)
th(j-a)
th(j-c)
2
2
R
=R
(TO-220FPAB)
th(j-a)
th(j-c)
R
=15C/W
th(j-a)
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
0
25
50
75
100
125
150
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
I (A)
M
I
M
t
=0.5
TO-220AB, I PAK and D PAK
2
2
T =50C
C
T =75C
C
T =125C
C
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220AB, IPAK and DPAK
0
10
20
30
40
50
60
70
80
90
100
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
I (A)
M
I
M
t
=0.5
TO-220FPAB
T =50C
C
T =75C
C
T =125C
C
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220FPAB
STPS20150CT/CG/CR/CFP
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
TO-220AB, I PAK and D PAK
2
2
t (s)
p
Z
/R
th(j-c)
th(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration. TO-220AB,
IPAK and DPAK
0
25
50
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
I (A)
R
V (V)
R
T =175C
j
T =150C
j
T =125C
j
T =100C
j
T =25C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
10
100
1000
C(nF)
F=1MHz
T =25C
j
V (V)
R
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
TO-220FPAB
t (s)
p
Z
/R
th(j-c)
th(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration.
TO-220FPAB
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1.0
10.0
100.0
I
(A)
FM
V
(V)
FM
T =125C
(typical values)
j
T =25C
j
T =125C
j
Fig. 8: Forward voltage drop versus forward
current (per diode).
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(cm)
R
(C/W)
th(j-a)
Fig. 9: Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
Cu = 35m) (STPS20150CG only).
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
1.25
1.40
0.049 0.055
C
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
1.75 0.055
0.069
R
0.40
0.016
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
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