STPS2045CT/CF/CG
June 1999 - Ed: 3B
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 10 A
V
RRM
45 V
Tj (max)
175
C
V
F
(max)
0.57 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
INSULATED PACKAGE: ISOWATT220AB
Insulating voltage = 2000V DC
Capacitance = 12pF
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for Switch-
Mode Power Supply and high frequency DC to DC
converters.
Packaged either in TO-220AB, ISOWATT220AB
or D
2
PAK, this device is especially intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
DESCRIPTION
D
2
PAK
STPS2045CG
A2
A1
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AB
D
2
PAK
Tc = 155
C
Per diode
10
A
ISOWATT220AB
Tc = 125
C
Per device
20
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
I
RRM
Repetitive peak reverse current
tp = 2
s square
F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 ms square
2
A
Tstg
Storage temperature range
-65 to +175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
TO-220AB
STPS2045CT
A1
A2
K
ISOWATT220AB
STPS2045CF
A1
A2
K
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/7
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK
Per diode
Total
2.2
1.3
C/W
ISOWATT220AB
Per diode
Total
4.5
3.5
R
th (c)
TO-220AB / D
2
PAK
Coupling
0.3
ISOWATT220AB
2.5
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 125
C
7
15
mA
V
F
*
Forward voltage drop
Tj = 125
C
I
F
= 10 A
0.5
0.57
V
Tj = 25
C
I
F
= 20 A
0.84
Tj = 125
C
I
F
= 20 A
0.65
0.72
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test :
* tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.015 I
F
2
(RMS)
STPS2045CT/CF/CG
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1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
t(s)
IM(A)
Tc=100
C
Tc=75
C
Tc=125
C
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB and D
2
PAK).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB and D
2
PAK).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Tamb(
C)
IF(av)(A)
Rth(j-a)=15
C/W
Rth(j-a)=Rth(j-c)
TO-220AB
D PAK
ISOWATT220AB
T
=tp/T
tp
Fig.
2:
Average
current
versus
ambient
temperature (
=0.5, per diode).
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
Tc=100
C
Tc=75
C
Tc=125
C
t(s)
IM(A)
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB).
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
STPS2045CT/CF/CG
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0
5
10
15
20
25
30
35
40
45
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
VR(V)
IR(
A)
Tj=150
C
Tj=100
C
Tj=125
C
Tj=75
C
Tj=50
C
Tj=25
C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=25
C
Tj=125
C
Tj=125
C
Typical values
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm )
Rth(j-a) (
C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35
m).
STPS2045CT/CF/CG
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