STPS20L25CT/CG
June 1999 - Ed : 3A
LOW DROP POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 10 A
V
RRM
25 V
Tj (max)
150 C
V
F
(max)
0.35 V
MAIN PRODUCT CHARACTERISTICS
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D
2
PAK, this device is
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
DESCRIPTION
TO-220AB
STPS20L25CT
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
25
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 145C
= 0.5
Per diode
Per device
10
20
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
220
A
I
RRM
Repetitive peak reverse current
tp=2
s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
3
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
A1
A2
K
D
2
PAK
STPS20L25CG
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
1.5
C/W
Total
0.8
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Tests conditions
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
800
A
Tj = 125
C
125
250
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 10 A
0.46
V
Tj = 125
C
I
F
= 10 A
0.30
0.35
Tj = 25
C
I
F
= 20 A
0.56
Tj = 125
C
I
F
= 20 A
0.41
0.48
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.22 x I
F(AV)
+ 0.013 I
F
2
(RMS)
0
1
2
3
4
5
6
7
8
9
10
11
0
1
2
3
4
5
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig.1 : Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0
2
4
6
8
10
12
IF(av)(A)
Rth(j-a)=50C/W
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig.2 : Average forward current versus ambient
temperature (
= 0.5).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS20L25CT/CG
2/5
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
IM(A)
Tc=25C
Tc=100C
Tc=75C
t(s)
I
M
t
=0.5
Fig.3 : Non repetitive surge peak forward current
versus overload duration (maximum values).
0
5
10
15
20
25
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(mA)
Tj=125C
Tj=25C
Tj=150C
VR(V)
Fig.5 : Reverse leakage current versus reverse
voltage applied (typical values).
1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
1
2
5
10
20
50
0.1
1.0
5.0
VR(V)
C(nF)
F=1MHz
Tj=25C
Fig.6 : Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0
VFM(V)
Tj=25C
Tj=125C
Typical values
Tj=150C
Fig.7 : Forward voltage drop versus forward
current (maximum values).
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm)
Rth(j-a) (C/W)
Fig.8 : Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness : 35
m).
(STPS20L25G only)
STPS20L25CT/CG
3/5
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT DIMENSIONS (in millimeters)
Cooling method: by conduction (method C)
STPS20L25CT/CG
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
Cooling method : C
Recommended torque value : 0.55 m.N
Maximum torque value : 0.70 m.N
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS20L25CT
STPS20L25CT
TO-220AB
2.23g
50
Tube
STPS20L25CG
STPS20L25CG
D
2
PAK
1.48g
50
Tube
STPS20L25CG-TR
STPS20L25CG
D
2
PAK
1.48g
1000
Tape & reel
Epoxy meets UL94,V0
STPS20L25CT/CG
5/5
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