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Электронный компонент: STPS20L60CT

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STPS20L60CT/CG/CR
July 2003 - Ed: 3C
POWER SCHOTTKY RECTIFIER
Dual center tap Schottky rectifiers suited for
Switched
Mode
Power
Supplies
and
high
frequency DC to DC converters.
Packaged in TO-220AB, I
2
PAK and D
2
PAK, this
device is intended for
use in high frequency
inverters.
DESCRIPTION
s
LOW FORWARD VOLTAGE DROP
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 140C
= 0.5
Per diode
Per device
10
20
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
220
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
5800
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2 x 10 A
V
RRM
60 V
Tj (max)
150 C
V
F
(max)
0.56 V
MAIN PRODUCT CHARACTERISTICS
A1
K
A2
TO-220AB
STPS20L60CT
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
K
A1
A2
D
2
PAK
STPS20L60CG
A1
A2
K
I
2
PAK
STPS20L60CR
STPS20L60CT/CG/CR
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
350
A
Tj = 125C
65
95
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 10 A
0.6
V
Tj = 125C
I
F
= 10 A
0.48
0.56
Tj = 25
C
I
F
= 20 A
0.74
Tj = 125C
I
F
= 20 A
0.62
0.7
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42x I
F(AV)
+ 0.014 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / I
2
PAK / D
2
PAK
Per diode
Total
1.6
0.85
C/W
R
th (c)
TO-220AB / I
2
PAK / D
2
PAK
Coupling
0.1
C/W
THERMAL RESISTANCE
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
PF(av)(W)
IF(av) (A)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
2
4
6
8
10
12
IF(av)(A)
T
=tp/T
tp
Tamb(C)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
Fig.
2:
Average
current
versus
ambient
temperature (
=0.5) (per diode).
STPS20L60CT/CG/CR
3/6
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
IM(A)
t(s)
I
M
t
=0.5
Tc=25C
Tc=75C
Tc=100C
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
5
10 15 20 25 30 35 40 45 50 55 60
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(mA)
VR(V)
Tc=25C
Tc=75C
Tc=100C
Tc=125C
Tc=150C
Tc=50C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
10
100
0.1
0.2
0.5
1.0
2.0
C(nF)
VR(V)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS20L60CT
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PACKAGE MECHANICAL DATA
I
2
PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.1
1.0
10.0
100.0
IFM(A)
VFM(V)
Tj=25C
Tj=125C
Tj=150C
(typical values)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
STPS20L60CT/CG/CR
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PACKAGE MECHANICAL DATA
D
2
PAK
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm