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STPS2545CT/CG/CFP
July 2003 - Ed: 2A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 12.5 A
V
RRM
45 V
Tj (max)
175 C
V
F
(max)
0.57 V
MAIN PRODUCT CHARACTERISTICS
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high fre-
quency DC to DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
TO-220AB
STPS2545CT
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB
D
2
PAK
Tc = 160C
Per diode
12.5
A
TO-220FPAB
Tc = 140C
Per device
25
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
2
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4800
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
A2
K
D
2
PAK
STPS2545CG
A1
A2
K
TO-220FPAB
STPS2545CFP
A1
A2
K
STPS2545CT/CG/CFP
2/6
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to ambient
TO-220AB / D
2
PAK
Per diode
1.6
C/W
TO-220FPAB
4
TO-220AB / D
2
PAK
Total
1.1
C/W
TO-220FPAB
3.5
R
th (c)
TO-220AB / D
2
PAK
Coupling
0.6
C/W
TO-220FPAB
3
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage Current
Tj = 25C
V
R
= V
RRM
125
A
Tj = 125C
9
25
mA
V
F
*
Forward Voltage drop
Tj = 125C
I
F
= 12.5 A
0.50
0.57
V
Tj = 25C
I
F
= 25 A
0.84
Tj = 125C
I
F
= 25 A
0.65
0.72
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.012 x I
F
2
(RMS)
0
1
2
3
4
5
6
7
8
9
10
0.0
2.5
5.0
7.5
10.0
12.5
15.0
I
(A)
F(AV)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
P
(W)
F(AV)
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
175
T
(C)
amb
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=50C/W
TO-220AB/DPAK
I
(A)
F(AV)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS2545CT/CG/CFP
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0
20
40
60
80
100
120
140
160
180
200
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
I (A)
M
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220AB, DPAK).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
5
10
15
20
25
30
35
40
45
V (V)
R
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=100C
T
j
=75C
T
j
=50C
I (mA)
R
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
t (s)
P
Zth(j-c) / Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D
2
PAK).
0
20
40
60
80
100
120
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
I (A)
M
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220FPAB).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t (s)
P
= 0.5
= 0.2
= 0.1
Single pulse
Zth(j-c) / Rth(j-c)
T
=tp/T
tp
Fig. 6-2:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0.1
1.0
10.0
1
10
100
V (V)
R
F=1MHz
V
osc
=30mV
T
j
=25C
C(nF)
Fig. 8: Junction capacitance versus reverse volt-
age applied (typical values).
STPS2545CT/CG/CFP
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1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Typical values)
T
j
=125C
(Typical values)
I
(A)
FM
Fig. 9:
Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(cm)
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35m).
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
STPS2545CT/CG/CFP
5/6
PACKAGE MECHANICAL DATA
D
2
PAK
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
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