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STPS2H100
July 2003 - Ed: 2A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 A
V
RRM
100 V
T
j
(max)
175C
V
F
(max)
0.70 V
MAIN PRODUCT CHARACTERISTICS
s
NEGLIGIBLE SWITCHING LOSSES
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Axial Power Schottky rectifier suited for Switch
Mode Power Supply and high frequency
DC/DC converters. Packaged in DO-41, this
device is intended for use in low voltage, high
frequency
inverters
and
small
battery
chargers.
DESCRIPTION
DO-41
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 120C
= 0.5
2
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
I
RRM
Repetitive peak reverse current
tp = 2 s square
F = 1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
1500
W
T
stg
Storage temperature range
- 65 to + 175
C
T
j
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS2H100
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Symbol
Parameter
Value
Unit
R
th(j-a)
Junction to ambient
Lead length = 10 mm
100
C/W
R
th(j-l)
Junction to lead
Lead lenght = 10 mm
35
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
T
j
= 25C
V
R
= V
RRM
1
A
T
j
= 125C
0.2
0.5
mA
V
F
**
Forward voltage drop
T
j
= 25
C
I
F
= 2 A
0.86
V
T
j
= 125
C
I
F
= 2 A
0.65
0.70
T
j
= 25C
I
F
= 4 A
0.92
T
j
= 125
C
I
F
= 4 A
0.72
0.78
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.62 x I
F(AV)
+ 0.04 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
P
(W)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 1
= 0.5
Fig. 1: Conduction losses versus average current.
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
25
50
75
100
125
150
175
T
(C)
amb
R
=R
th(j-a)
th(j-I)
R
=100C/W
th(j-a)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS2H100
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I (A)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
20
40
60
80
100
V (V)
R
T =125C
j
T =150C
j
T =100C
j
T =50C
j
T =25C
j
T =75C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
I
(A)
FM
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9-1: Forward voltage drop versus forward
current (low level).
C(pF)
10
100
1
10
100
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
j
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
I
(A)
FM
1
10
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
(V)
FM
T =125C
(typical values)
j
T =125C
(maximum values)
j
T =25C
(maximum values)
j
Fig. 9-2: Forward voltage drop versus forward
current (high level).
I (A)
M
0
1
2
3
4
5
6
7
8
9
10
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
=0.5
t(s)
T =25C
a
T =75C
a
T =125C
a
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Z
/R
th(j-a)
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
=tp/T
tp
t (s)
p
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
STPS2H100
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
DO-41 (plastic)
C
A
B
O
/
O
/
D
O
/
D
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
1.102
D
0.712
0.863
0.028
0.034
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS2H100
STPS2H100
cathode ring
DO-41
0.34 g
2000
Ammopack
STPS2H100RL
STPS2H100
cathode ring
5000
Tape & Reel
s
EPOXY MEETS UL94,V0
0
20
40
60
80
100
120
5
10
15
20
25
R (C/W)
th
L
(mm)
leads
R
th(j-a)
R
th(j-I)
Fig. 10: Thermal resistance versus lead length.
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