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STPS2L60/A
July 2003 - Ed: 2A
POWER SCHOTTKY RECTIFIER
Axial and Surface Mount Power Schottky rectifier
suited for Switch Mode Power Supplies and high
frequency DC to DC converters. Packaged in
DO-41 and SMA, this device is intended for use in
low voltage, high frequency inverters and small
battery chargers.
DESCRIPTION
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW FORWARD VOLTAGE DROP
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 115C
= 0.5
SMA
2
A
T
L
= 110C
= 0.5
DO-41
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
1600
W
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
I
F(AV)
2 A
V
RRM
60 V
Tj (max)
150C
V
F
(max)
0.55 V
MAIN PRODUCT CHARACTERISTICS
DO-41
STPS2L60
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
SMA
STPS2L60A
STPS2L60/A
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Symbol
Parameter
Value
Unit
R
th(j-l)
Junction to leads
Lead length = 10 mm
DO-41
30
C/W
SMA
25
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
T
j
= 25C
V
R
= 60V
0.1
mA
T
j
= 100C
2
10
V
F
*
Forward voltage drop
T
j
= 25C
I
F
= 2 A
0.60
V
T
j
= 125C
0.51
0.55
T
j
= 25C
I
F
= 4 A
0.77
T
j
= 125C
0.62
0.67
Pulse test : * tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.43 x I
F(AV)
+ 0.06 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
P
(W)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
F(AV)
= 1
= 0.5
= 0.2
= 0.1
= 0.05
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
25
50
75
100
125
150
T
(C)
amb
T
=tp/T
tp
R
=100C/W
th(j-a)
R
=R
th(j-a)
th(j-I)
DO-41
SMA
Fig. 2: Average forward current versus ambient
temperature (
= 0.5).
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Z
/R
th(j-a)
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t (s)
p
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (DO-41).
Z
/R
th(j-a)
th(j-a)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t (s)
p
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).
I (A)
M
0
1
2
3
4
5
6
7
8
9
10
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
=0.5
t(s)
T =25C
a
T =125C
a
T =75C
a
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(DO-41).
I (A)
M
0
1
2
3
4
5
6
7
8
9
10
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
=0.5
t(s)
T =25C
a
T =125C
a
T =75C
a
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMA).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
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R
(C/W)
th(j-)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(Cu)(cm)
Fig. 11-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35m) (SMA).
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
9
10
R
(C/W)
th(j-)
S(Cu)(cm)
Fig. 11-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35m) (DO-41).
I (A)
R
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0
10
20
30
40
50
60
V (V)
R
T =125C
j
T =150C
j
T =100C
j
T =75C
j
T =50C
j
T =25C
j
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
C(pF)
10
100
1000
1
10
100
F=1MHz
V
=30mV
T =25C
OSC
j
V (V)
R
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
I
(A)
FM
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
(V)
FM
T =25C
(maximum values)
j
T =125C
(maximum values)
j
T =125C
(typical values)
j
Fig. 9: Forward voltage drop versus forward
current (low level, maximum values).
R (C/W)
th
R
th(j-I)
0
20
40
60
80
100
120
5
10
15
20
25
R
th(j-a)
L
(mm)
leads
Fig. 10: Thermal resistance versus lead length
(DO-41).
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PACKAGE MECHANICAL DATA
SMA (JEDEC DO-214AC)
E
C
L
E1
D
A1
A2
b
2.40
1.65
1.45
1.45
FOOT PRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
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