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STPS30150CT/CW/CFP
July 2003 - Ed: 6C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 15 A
V
RRM
150 V
Tj
175C
V
F
(max)
0.75 V
MAIN PRODUCT CHARACTERISTICS
s
HIGH JUNCTION TEMPERATURE CAPABILITY
s
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s
LOW LEAKAGE CURRENT
s
INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high
frequency
Switched
Mode
Power
Supplies.
DESCRIPTION
TO-220AB
STPS30150CT
K
A2
A1
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
150
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220FPAB Tc = 110C
per diode
per device
15
A
TO-220AB
Tc = 155C
TO-247
30
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
10500
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
TO-247
STPS30150CW
A1
K
A2
A1
A2
K
A1
A2
K
TO-220FPAB
STPS30150CFP
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS30150CT/CW/CFP
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Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220FPAB
Per diode
Total
4
3.3
C/W
TO-220AB
Per diode
Total
1.6
0.85
TO-247
Per diode
Total
1.5
0.8
R
th (c)
TO-220FPAB
Coupling
2.6
TO-220AB
Coupling
0.1
TO-247
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
6.5
A
Tj = 125C
8
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.92
V
Tj = 125C
I
F
= 15 A
0.69
0.75
Tj = 25
C
I
F
= 30 A
1
Tj = 125C
I
F
= 30 A
0.8
0.86
Pulse test :
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.0073 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0
2
4
6
8
10
12
14
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
TO-220FPAB
TO-220AB/TO-247/IPAK/DPAK
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode).
STPS30150CT/CW/CFP
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1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
t(s)
IM(A)
Tc=50C
Tc=75C
Tc=125C
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
t(s)
IM(A)
Tc=25C
Tc=125C
Tc=75C
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB only).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration.
(TO-220FPAB)
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30150CT/CW/CFP
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=25C
Tj=125C
Tj=125C
Typical values
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
25
50
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(A)
Tj=125C
Tj=25C
Tj=150C
Tj=100C
Tj=175C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
10
100
1000
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
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PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
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