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STPS3030CT/CG/CR
July 2003 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK and I
2
PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
DESCRIPTION
s
VERY SMALL CONDUCTION LOSSES
s
NEGLIGIBLE SWITCHING LOSSES
s
EXTREMELY FAST SWITCHING
s
LOW
FORWARD
VOLTAGE
DROP
FOR
HIGHER EFFICIENCY
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
30
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward
current
Tc = 135C
= 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
250
A
I
RRM
Peak repetitive reverse current
tp=2 s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
4100
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage (rated V
R
, Tj = 25C)
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 15 A
V
RRM
30 V
Tj (max)
150C
V
F
(max)
0.42 V
MAJOR PRODUCTS CHARACTERISTICS
K
A1
A2
I
2
PAK
STPS3030CR
A1
A2
K
TO-220AB
STPS3030CT
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A1
K
A2
K
A1
A2
D
2
PAK
STPS3030CG
STPS3030CT/CG/CR
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
0.23
1.0
mA
Tj = 125C
125
180
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 15 A
0.44
0.49
V
Tj = 125C
I
F
= 15 A
0.36
0.40
Tj = 25
C
I
F
= 30 A
0.53
0.58
Tj = 125C
I
F
= 30 A
0.49
0.53
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.26 x I
F(AV)
+ 0.0107 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case TO-220AB - D
2
PAK - I
2
PAK
Per diode
Total
1.2
0.8
C/W
R
th(c)
Coupling
0.4
C/W
THERMAL RESISTANCES
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
I
(A)
F(av)
P(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
Tamb(C)
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=50C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature(
= 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS3030CT/CG/CR
3/6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c)/Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
5
10
15
20
25
30
VR(V)
T
j
=150C
T
j
=125C
T
j
=25C
T
j
=100C
T
j
=75C
T
j
=50C
IR(mA)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.1
1.0
10.0
1
10
100
VR(V)
F=1MHz
V
osc
=30mV
T
j
=25C
C(nF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
0
25
50
75
100
125
150
175
200
225
250
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C
=25C
T
C
=75C
T
C
=125C
IM(A)
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
(V)
FM
T
j
=25C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Maximum values)
T
j
=125C
(Typical values)
T
j
=125C
(Typical values)
IFM(A)
Fig. 9: Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(cm)
DPAK
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35m).
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