ChipFind - документация

Электронный компонент: STPS3045CT

Скачать:  PDF   ZIP
STPS3045CT/CG/CP/CPI/CW
June 1999 - Ed: 4B
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 15 A
V
RRM
45 V
Tj (max)
175
C
V
F
0.57 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE: TOP-3I
Insulating voltage = 2500V RMS
Capacitance = 12pF
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for Switch-
Mode Power Supply and high frequency DC to DC
converters.
Packaged either in TO-220AB, D
2
PAK, TO-247,
SOT93 or TOP-3I, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
DESCRIPTION
D
2
PAK
STPS3045CG
A2
A1
K
A1
A2
K
TO-220AB
STPS3045CT
A1
A2
K
SOT-93
STPS3045CP
Insulated
TOP-3I
STPS3045CPI
TO-247
STPS3045CW
K
A1
A2
K
A1
A2
A1
K
A2
1/9
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB
D
2
PAK
Per diode
Total
1.60
0.85
C/W
SOT-93
TO-247
Per diode
Total
1.5
0.8
TOP-3I
Per diode
Total
2.2
1.6
R
th (c)
TO-220AB
D
2
PAK
SOT-93
TO-247
Coupling
0.10
TOP-3I
Coupling
1.0
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(c)
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
= 0.5
TO-220AB
D
2
PAK
SOT-93
TO-247
Tc = 155
C
Per diode
Per device
15
30
A
TOP-3I
Tc = 150
C
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
I
RRM
Repetitive peak reverse current
tp = 2
s square
F = 1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
3
A
Tstg
Storage temperature range
-65 to +175
C
Tj
Maximum operating junction temperature *
175
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
STPS3045CT/CG/CP/CPI/CW
2/9
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
20
Tamb(
C)
IF(av)(A)
Rth(j-a)=15
C/W
Rth(j-a)=Rth(j-c)
TO-220AB
SOT-93
TO-247
D PAK
TOP-3I
T
=tp/T
tp
Fig.
2:
Average
current
versus
ambient
temperature (
= 0.5, per diode).
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
200
A
Tj = 125
C
11
40
mA
V
F
*
Forward voltage drop
Tj = 125
C
I
F
= 15 A
0.5
0.57
V
Tj = 25
C
I
F
= 30 A
0.84
Tj = 125
C
I
F
= 30 A
0.65
0.72
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test :
* tp = 380
s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.01 I
F
2
(RMS)
STPS3045CT/CG/CP/CPI/CW
3/9
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
t(s)
IM(A)
Tc=75
C
Tc=100
C
Tc=125
C
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D
2
PAK, SOT-93 and TO-247).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
45
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
VR(V)
IR(
A)
Tj=150
C
Tj=100
C
Tj=125
C
Tj=75
C
Tj=50
C
Tj=25
C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
200
VFM(V)
IFM(A)
Typical values
Tj=125
C
Tj=125
C
Tj=25
C
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
IM(A)
Tc=75
C
Tc=100
C
Tc=125
C
t(s)
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TOP-3I).
STPS3045CT/CG/CP/CPI/CW
4/9
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
STPS3045CT/CG/CP/CPI/CW
5/9