STPS3L25S
June 1999 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
I
F(AV)
3 A
V
RRM
25 V
Tj (max)
150C
V
F
(max)
0.44 V
MAIN PRODUCT CHARACTERISTICS
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
FEATURES AND BENEFITS
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters.
Packaged in SMC, this device is especially in-
tended for use as an antiparallel diode on synchro-
nous rectification freewheel MOSFET's at the
secondary of 3.3V SMPS and DC/DC units.
DESCRIPTION
SMC
JEDEC DO-214AB
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
25
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 115C
= 0.5
3
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp= 2
s square F=1kHz
1
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
1
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values)
* :
dPtot
dTj
<
1
Rth
(
j
-
a
)
thermal runaway condition for a diode on its own heatsink
1/4
Symbol
Parameter
Value
Unit
R
th(j-l)
Junction to lead
20
C/W
THERMAL RESISTANCES
Symbol
Tests Conditions
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
90
A
Tj = 125
C
15
30
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 3 A
0.49
V
Tj = 125
C
0.37
0.44
Tj = 25
C
I
F
= 6 A
0.6
Tj = 125
C
0.5
0.58
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.3 x I
F(AV)
+ 0.047 I
F
2
(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Rth(j-a)=90C/W
Rth(j-a)=Rth(j-l)
Tamb(C)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
=0.5).
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
12
14
IM(A)
Ta=25C
Ta=100C
Ta=50C
t(s)
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
STPS3L25S
2/4
0
5
10
15
20
25
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
IR(mA)
Tj=125C
Tj=25C
Tj=100C
Tj=150C
VR(V)
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values).
1
2
5
10
20
30
10
100
500
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
50
IFM(A)
Typical values
Tj=150C
Tj=25C
Tj=100C
Tj=125C
VFM(V)
Fig. 7-1: Forward voltage drop versus forward
current (maximum values, high level).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
20
30
40
50
60
70
80
90
100
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IFM(A)
Typical values
Tj=150C
Tj=25C
Tj=100C
Tj=125C
VFM(V)
Fig. 7-2: Forward voltage drop versus forward
current (maximum values, low level).
STPS3L25S
3/4
PACKAGE MECHANICAL DATA
SMC
E
C
L
E2
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
2.90
3.2
0.114
0.126
c
0.15
0.41
0.006
0.016
E
7.75
8.15
0.305
0.321
E1
6.60
7.15
0.260
0.281
E2
4.40
4.70
0.173
0.185
D
5.55
6.25
0.218
0.246
L
0.75
1.60
0.030
0.063
2.0
4.2
2.0
3.3
FOOT PRINT DIMENSIONS (in millimeters)
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS3L25S
S23
SMC
0.243g
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
STPS3L25S
4/4
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