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STPS40L45CG/CT/CW
July 2003 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB, TO-247 and D
2
PAK
these devices are intended for use in low voltage,
high
frequency
inverters,
free-wheeling
and
polarity protection applications.
DESCRIPTION
s
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
45
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 130C
= 0.5
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
230
A
I
RRM
Repetitive peak reverse current
tp = 2 s square F = 1kHz
2
A
I
RSM
Non repetitive peak reverse current
tp = 100 s square
3
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
8100
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 20 A
V
RRM
45 V
Tj (max)
150 C
V
F
(max)
0.49 V
MAIN PRODUCTS CHARACTERISTICS
A1
K
A2
TO-247
STPS40L45CW
A1
K
A2
TO-220AB
STPS40L45CT
K
A2
A1
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
K
A1
A2
D
2
PAK
STPS40L45CG
STPS40L45CT/CW
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25C
V
R
= V
RRM
0.6
mA
Tj = 125C
140
280
mA
V
F
*
Forward voltage
drop
Tj = 25
C
I
F
= 20 A
0.53
V
Tj = 125C
I
F
= 20 A
0.42
0.49
Tj = 25C
I
F
= 40 A
0.69
Tj = 125C
I
F
= 40 A
0.6
0.7
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x I
F(AV)
+ 0.0105 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
1.5
0.8
C/W
R
th(c)
Coupling
0.1
C/W
THERMAL RESISTANCES
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
Tamb(C)
IF(av)(A)
Rth(j-a)=15C/W
Rth(j-a)=Rth(j-c)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5, per diode)
STPS40L45CT/CW
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1E-3
1E-2
1E-1
1E+0
0
25
50
75
100
125
150
175
200
225
250
t(s)
IM(A)
Tc=25C
Tc=125C
Tc=75C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
45
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
VR(V)
IR(mA)
Tj=125C
Tj=75C
Tj=25C
Tj=150C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
10
100
0.1
1.0
10.0
C(nF)
F=1MHz
Tj=25C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS40L45CT/CW
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
s
COOLING METHOD : C
s
RECOMMENDED TORQUE VALUE : 0.55M.N
s
MAXIMUM TORQUE VALUE : 0.70 M.N
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
1000
VFM(V)
IFM(A)
Typical values
Tj=150C
Tj=125C
Tj=75C
Tj=25C
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35m)
(STPS40L45CG only).
STPS40L45CG/CT/CW
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
s
COOLING METHOD : BY CONDUCTION (METHOD C)
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT (in millimeters)
D
2
PAK
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