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Электронный компонент: STPS41L60CG

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STPS41L60CG/CT/CR
July 2003 - Ed : 3A
POWER SCHOTTKY RECTIFIER
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in D
2
PAK, I
2
PAK and TO-220AB this
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
DESCRIPTION
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW FORWARD VOLTAGE DROP
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward current
Tc = 125C
= 0.5
Per diode
20
A
Per device
40
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
I
RRM
Peak repetitive reverse current
tp = 2 s square F=1kHz
1
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
9500
W
T
stg
Storage temperature range
- 65 to + 175
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 20 A
V
RRM
60 V
Tj (max)
150 C
V
F
(max)
0.58 V
MAIN PRODUCTS CHARACTERISTICS
A1
K
A2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
K
A1
A2
D
2
PAK
STPS41L60CG
A1
K
A2
TO-220AB
STPS41L60CT
I
2
PAK
STPS41L60CR
A1
K
A2
STPS41L60CG / STPS41L60CT / STPS41L60CR
2/6
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
240
A
Tj = 125C
77
130
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 20 A
0.60
V
Tj = 125C
I
F
= 20 A
0.50
0.58
Tj = 25
C
I
F
= 40 A
0.77
Tj = 125C
I
F
= 40 A
0.67
0.71
Pulse test : * tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.007 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
C/W
R
th(c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
IF(av)(A)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
PF(av)(W)
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
2
4
6
8
10
12
14
16
18
20
22
0
25
50
75
100
125
150
Tamb(C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=50C/W
IF(av)(A)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5).
STPS41L60CG / STPS41L60CT / STPS41L60CR
3/6
0
25
50
75
100
125
150
175
200
225
250
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
Tc=25C
Tc=75C
Tc=125C
IM(A)
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
5
10
15
20
25
30
35
40
45
50
55
60
VR(V)
Tj=150C
Tj=125C
Tj=25C
Tj=100C
Tj=75C
Tj=50C
IR(mA)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
0.1
1.0
10.0
1
10
100
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(nF)
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
4/6
STPS41L60CG / STPS41L60CT / STPS41L60CR
PACKAGE MECHANICAL DATA
I
2
PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VFM(V)
Tj=25C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Maximum values)
Tj=125C
(Typical values)
Tj=125C
(Typical values)
IFM(A)
Fig. 9: Forward voltage drop versus forward current.
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S(cm)
Rth(j-a)(C/W)
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu = 35m) (STPS41L60CG only).
STPS41L60CG / STPS41L60CT / STPS41L60CR
5/6
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
PACKAGE MECHANICAL DATA
D
2
PAK
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT (dimensions in mm)