STPS640CT/CF/CB
August 1999 - Ed: 4A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2 x 3 A
V
RRM
40 V
Tj (max)
150
C
V
F
(max)
0.57 V
MAIN PRODUCT CHARACTERISTICS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
SMD PACKAGE (tape and reel option: -TR)
FEATURES AND BENEFITS
Dual Schottky rectifier suited to Switch Mode
Power Supplies and other Power Converters.
This device is intended for use in low and medium
voltage operation, and particulary, in high fre-
quency circuitries where low switching losses are
required (free wheeling and polarity protection).
DESCRIPTION
DPAK
STPS640CB
A1
A2
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
RMS forward current
TO-220AB / ISOWATT220AB
10
A
DPAK
6
I
F(AV)
Average forward current
= 0.5
TO-220AB
Tc = 135
C
3
A
ISOWATT220AB
Tc = 130
C
DPAK
Tc = 120
C
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
75
A
I
RRM
Repetitive peak reverse current
tp = 2
s F = 1kHz square
1
A
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/
s
ABSOLUTE RATINGS (limiting values, per diode)
A1
A1
K
K
A2
A2
TO-220AB
STPS640CT
ISOWATT220AB
STPS640CF
K
A2
A1
1/6
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB/ DPAK
Per diode
Total
5.5
3
C/W
ISOWATT220AB
Per diode
Total
7.5
5.2
R
th(c)
Coupling
TO-220AB
0.5
C/W
ISOWATT220AB
3
THERMAL RESISTANCES
Symbol
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
100
A
Tj = 125
C
2
10
mA
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 3 A
0.63
V
Tj = 25
C
I
F
= 6 A
0.84
Tj = 125
C
I
F
= 3 A
0.5
0.57
Tj = 125
C
I
F
= 6 A
0.67
0.72
Pulse test :
* tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.050 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Tamb(
C)
IF(av)(A)
Rth(j-a)=15
C/W
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220AB/DPAK
T
=tp/T
tp
Fig. 2: Average current versus ambient temperature
(
= 0.5, per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STPS640CT/CF/CB
2/6
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.1
= 0.2
= 0.5
T
=tp/T
tp
Fig. 4.1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB / DPAK).
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
t(s)
IM(A)
Tc=75
C
Tc=130
C
Tc=100
C
I
M
t
=0.5
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration.
(Maximum values, per diode) (ISOWATT220AB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB).
0
5
10
15
20
25
30
35
40
1E-5
1E-4
1E-3
1E-2
VR(V)
IR(A)
Tj=150
C
Tj=75
C
Tj=100
C
Tj=125
C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
45
t(s)
IM(A)
Tc=75
C
Tc=135
C
Tc=100
C
I
M
t
=0.5
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration.
(Maximum values, per diode) (TO-220AB/ DPAK).
1
2
5
10
20
50
10
100
500
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
STPS640CT/CF/CB
3/6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
IFM(A)
Tj=125
C
Typical values
Tj=150
C
VFM(V)
Fig. 7: Forward voltagedrop versus forwardcurrent
(maximum values, per diode).
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm )
Rth(j-a) (
C/W)
Fig. 8: Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35
m).
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
STPS640CT/CF/CB
4/6
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
PACKAGE MECHANICAL DATA
DPAK
6.7
6.7
3
3
1.6
1.6
2.3
2.3
FOOTPRINT DIMENSIONS (in millimeters)
STPS640CT/CF/CB
5/6
PDF 
ZIP