STS11NF30L
N-CHANNEL 30V - 0.009
- 11A SO-8
LOW GATE CHARGE STripFET
TM
POWER MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.014
@ 5V
s
TYPICAL Q
g
= 19 nC @ 4.5V
s
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique "Single
Feature Size
TM
" strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS FOR MOBILE
PCs
INTERNAL SCHEMATIC DIAGRAM
April 2000
SO-8
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
DS
Drain-source Volt age (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
G ate-source Voltage
20
V
I
D
Drain Current (continuous) at Tc = 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
11
7
A
A
I
DM
(
)
Drain Current (pulsed)
44
A
P
tot
T otal Dissipation at T
c
= 25
o
C
2.5
W
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS11NF30L
30 V
< 0.012
11 A
1/6
THERMAL DATA
R
thj -amb
T
j
T
s tg
(*)Thermal Resist ance Junction-ambient
Maximum Operating Junction T emperature
St orage Temperature
50
150
-65 t o 150
o
C/W
o
C
o
C
(*) Mounted on FR-4 board (t
10
sec)
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 5.5 A
V
GS
= 5 V
I
D
= 5. 5 A
0.009
0.014
0.012
0.0185
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
11
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 5.5 A
20
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0 V
1650
800
170
pF
pF
pF
STS11NF30L
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 15 V
I
D
= 5.5 A
R
G
= 4.7
V
GS
= 4. 5 V
(Resistive Load, see fig. 3)
47
66
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V
I
D
= 11 A
V
G S
= 4.5 V
19
3
10
24
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 24 V
I
D
= 5. 5 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
34
24
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
11
44
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 11 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 11 A
di/dt = 100 A/
s
V
r
= 15 V
T
j
= 150
o
C
(Resistive Load, see fig. 5)
70
105
2.4
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STS11NF30L
3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STS11NF30L
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
STS11NF30L
5/6
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