STS12NF30L
N - CHANNEL 30V - 0.0085
- 12A SO-8
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.0085
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique
"
Single Feature
Size
TM
"
strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
s
INTERNAL SCHEMATIC DIAGRAM
May 1999
SO-8
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
DS
Drain-source Volt age (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
G ate-source Voltage
20
V
I
D
Drain Current (continuous) at Tc = 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
12
7.5
A
A
I
DM
(
)
Drain Current (pulsed)
48
A
P
tot
T otal Dissipation at T
c
= 25
o
C
2.5
W
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS12NF30L
30 V
< 0.01
12 A
1/8
THERMAL DATA
R
thj -amb
Tj
Ts tg
(*)Thermal Resist ance Junction-ambient
Maximum Operating Junction T emperature
St orage Temperature
50
150
-55 t o 150
o
C/W
o
C
o
C
(*) Mounted on FR-4 board (t
10
sec)
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.6
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 6 A
V
GS
= 4. 5 V
I
D
= 6 A
0.0085
0.01
0.01
0.012
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
12
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 6 A
20
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0 V
2400
590
200
pF
pF
pF
STS12NF30L
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 15 V
I
D
= 6 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
35
90
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V I
D
= 12 A V
GS
= 4.5 V
35
9
18
50
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 15 V
I
D
= 6 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
90
45
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
clamp
= 24 V
I
D
= 12 A
R
G
= 4.7
V
G S
= 4.5 V
(Induct ive Load, see fig. 5)
35
35
80
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
12
48
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 12 A
V
GS
= 0
1. 2
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
di/dt = 100 A/
s
V
DD
= 15 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
45
70
3
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STS12NF30L
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STS12NF30L
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STS12NF30L
5/8
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