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September 2003
.
STS25NH3LL
N-CHANNEL 30V - 0.0032
- 25A SO-8
STripFETTM III MOSFET FOR DC-DC CONVERSION
s
TYPICAL R
DS
(on) = 0.0032
@ 10V
s
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
The STS25NH3LL utilizes the latest advanced design
rules of ST's propetary STripFETTM technology. This
novel 0.6
process coupled to unique metalization
techniques re alizes the most advanced low voltage
MOSFET in SO-8 ever produced. It is therefore suit able
for the most demanding DC-DC converter applications
where high efficiency is to be achived at high output
current.
APPLICATIONS
s
DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE
s
SYNCHRONOUS RECTIFIER
TYPE
V
DSS
R
DS(on)
I
D
STS25NH3LL
30 V
<0.0035
25 A
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(1)
Starting T
j
= 25
o
C I
D
= 12.5A
V
DD
= 30V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
18
V
I
D
Drain Current (continuous) at T
C
= 25C
25
A
I
D
Drain Current (continuous) at T
C
= 100C
18
A
I
DM
(
)
Drain Current (pulsed)
100
A
E
AS (1)
Single Pulse Avalanche Energy
200
mJ
P
tot
Total Dissipation at T
C
= 25C
3.2
W
STS25NH3LL
2/8
THERMAL DATA
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu and t
[
10 sec.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
Rthj-lead
T
j
T
stg
(*)
Thermal Resistance Junction-ambient
Thermal Resistance Junction-leads
Maximum Operating Junction Temperature
Storage Temperature
Max
Max
47
16
-55 to 175
-55 to 175
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 18 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 12.5 A
V
GS
= 4.5 V
I
D
= 12.5 A
0.0032
0.004
0.0035
0.005
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 10 V
I
D
= 12.5 A
30
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4450
655
50
pF
pF
pF
3/8
STS25NH3LL
Safe Operating Area
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 12.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
18
50
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V I
D
=25A V
GS
=4.5 V
(see test circuit, Figure 2)
30
12.5
10
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 12.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
75
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
25
100
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 25 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 25 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 3)
32
34
2.1
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Thermal Impedance
STS25NH3LL
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STS25NH3LL
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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