N-CHANNEL 60V - 0.045
- 4A SO-8
P-CHANNEL 60V - 0.100
- 3A SO-8
StripFETTM MOSFET
1/11
September 2004
STS4C3F60L
Table 1: General Features
s
TYPICAL R
DS(on)
(N-Channel) = 0.045
s
TYPICAL R
DS(on)
(P-Channel) = 0.100
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC/DC CONVERTERS
s
BACK LIGHT INVERTER FOR LCD
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
STS4C3F60L (N-Channel)
STS4C3F60L (P-Channel)
60 V
60 V
< 0.055
< 0.120
4 A
3 A
SO-8
PART NUMBER
MARKING
PACKAGE
PACKAGING
STS4C3F60L
S4C3F60L
SO-8
TAPE & REEL
Rev. 2
STS4C3F60L
2/11
Table 3: Absolute Maximum ratings
( )
Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Table 4: Thermal Data
(1) When mounted on 1 inch pad of 2 oz. copper, t
10 s
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Table 6: Dynamic
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Symbol
Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
Single Operating
4
3
A
I
D
Drain Current (continuous) at T
C
= 100C
Single Operating
2.5
1.9
A
I
DM
( )
Drain Current (pulsed)
16
12
A
P
TOT
Total Dissipation at T
C
= 25C
2
W
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
Rthj-amb (1)
Thermal Resistance Junction-ambient
62.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
n-ch
p-ch
60
60
V
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125C
n-ch
p-ch
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
V
GS
= 16V
n-ch
p-ch
100
100
nA
nA
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 A
n-ch
p-ch
1
1.5
V
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 2 A
V
GS
= 10 V, I
D
= 1.5 A
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 4.5 V, I
D
= 1.5 A
n-ch
p-ch
n-ch
p-ch
0.045
0.100
0.050
0.130
0.055
0.120
0.065
0.160
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward
Transconductance
V
DS
= 30 V
,
I
D
= 2 A
V
DS
= 10 V
,
I
D
= 3 A
n-ch
p-ch
7
7.2
S
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
n-ch
p-ch
1030
630
pF
pF
C
oss
Output Capacitance
n-ch
p-ch
140
121
pF
pF
C
rss
Reverse Transfer
Capacitance
n-ch
p-ch
40
49
pF
pF
3/11
STS4C3F60L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Switching On
Table 8: Switching Off
Table 9: Source-Drain Diodef
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
N-CHANNEL
V
DD
= 30 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
P-CHANNEL
V
DD
= 30 V, I
D
= 1.5 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load see, Figure 28)
n-ch
p-ch
n-ch
p-ch
15
124
28
54
ns
ns
ns
ns
Q
g
Total Gate Charge
N-CHANNEL
V
DD
= 48 V, I
D
= 4 A,
V
GS
= 4.5 V
P-CHANNEL
V
DD
= 48 V, I
D
= 3 A,
V
GS
= 4.5 V
(see, Figure 31)
n-ch
p-ch
15
11.6
20.4
15.7
nC
nC
Q
gs
Gate-Source Charge
n-ch
p-ch
4
4.5
nC
nC
Q
gd
Gate-Drain Charge
n-ch
p-ch
4
4.7
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
N-CHANNEL
V
DD
= 30 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
P-CHANNEL
V
DD
= 30 V, I
D
= 1.5 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load see, Figure 28)
n-ch
p-ch
n-ch
p-ch
45
39
10
14.5
ns
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
n-ch
p-ch
4
3
A
A
I
SDM
(2)
Source-drain Current (pulsed)
n-ch
p-ch
16
12
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
I
SD
= 3 A, V
GS
= 0
n-ch
p-ch
1.2
1.2
V
V
t
rr
Reverse Recovery Time
N-CHANNEL
I
SD
= 4 A, di/dt = 100 A/s
V
DD
= 20V, T
j
= 150C
P-CHANNEL
I
SD
= 3 A, di/dt = 100 A/s
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 29)
n-ch
p-ch
85
44
ns
ns
Q
rr
Reverse Recovery Charge
n-ch
p-ch
85
68.2
nC
nC
I
RRM
Reverse Recovery Current
n-ch
p-ch
2
3.1
A
A
STS4C3F60L
4/11
Figure 3:
.
Safe Operating n-channel
Figure 4: Output Characteristics n-channel
Figure 5: Transconductance n-channel
Figure 6: Thermal Impedance For Complemen-
tary Pair
Figure 7: Transfer Characteristics n-channel
Figure 8: Static Drain-Source On Resistance n-
channel
5/11
STS4C3F60L
Figure 9: Gate Charge vs Gate-Source Voltage
n-channel
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature n-channel
Figure 11: Source-Drain Forward Characteris-
tics n-channel
Figure 12: Capacitance Variations n-channel
Figure 13: Normalized On Resistance vs Tem-
perature n-channel
Figure 14: Normalized BVdss vs Temperature
n-channel
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