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PRELIMINARY DATA
August 2002
STS4DNF30L
DUAL N-CHANNEL 30V - 0.039
- 4A SO-8
STripFETTM POWER MOSFET
s
TYPICAL R
DS(on)
= 0.039
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGMENT IN CELLULAR PHONES
s
DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS
(
q
)Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STS4DNF30L
30 V
< 0.050
4 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
4
A
I
D
Drain Current (continuous) at T
C
= 100C
2.5
A
I
DM
(
q
)
Drain Current (pulsed)
16
A
P
TOT
Total Dissipation at T
C
= 25C Dual Operation
2
W
SO-8
INTERNAL SCHEMATIC DIAGRAM
STS4DNF30L
2/6
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb
(*)Thermal Resistance Junction-ambient Max
62.5
C/W
T
stg
Storage Temperature Range
-55 to 150
C
T
l
Junction Temperature
150
C
(*) Mounted on FR-4 board (t
10sec)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2 A
0.039
0.050
V
GS
= 4.5V, I
D
= 2 A
0.046
0.060
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2 A
1
3
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
330
pF
C
oss
Output Capacitance
90
pF
C
rss
Reverse Transfer
Capacitance
40
pF
3/6
STS4DNF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 2 A R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
11
ns
t
r
Rise Time
100
ns
Q
g
Total Gate Charge
V
DD
= 24 V, I
D
= 4 A,
V
GS
= 10 V
6.5
9
nC
Q
gs
Gate-Source Charge
3.6
nC
Q
gd
Gate-Drain Charge
2
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 3)
25
22
ns
ns
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V, I
D
= 4 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 5)
22
55
75
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
4
A
I
SDM
(2)
Source-drain Current (pulsed)
16
A
V
SD
(1)
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
1.2
V
t
rr
Reverse Recovery Time
I
SD
= 4 A, di/dt = 100A/s,
V
DD
= 20 V, T
j
= 150C
(see test circuit, Figure 5)
30
ns
Q
rr
Reverse Recovery Charge
18
nC
I
RRM
Reverse Recovery Current
1.2
A
STS4DNF30L
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Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
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STS4DNF30L
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
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