1/6
PRELIMINARY DATA
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STS4DPF30L
DUAL P-CHANNEL 30V - 0.07
- 4A SO-8
STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.07
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
s
DC-DC CONVERTER
TYPE
V
DSS
R
DS(on)
I
D
STS4DPF30L
30 V
<0.08
4 A
SO-8
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C Single Operation
Drain Current (continuous) at T
C
= 100C Single Operation
4
2.5
A
A
I
DM
(
)
Drain Current (pulsed)
16
A
P
tot
Total Dissipation at T
C
= 25C Dual Operation
Total Dissipation at T
C
= 25C Single Operation
2.0
1.6
W
W
INTERNAL SCHEMATIC DIAGRAM
STS4DPF30L
2/6
THERMAL DATA
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu and t
[
10 sec.
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Single Operation
Dual Operating
Thermal Operating Junction-ambient
Storage Temperature
78
62.5
-55 to150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 2 A
V
GS
= 4.5 V
I
D
= 2 A
0.070
0.085
0.08
0.10
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15V
I
D
= 2 A
10
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1350
490
130
pF
pF
pF
3/6
STS4DPF30L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 2 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 1)
25
35
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V I
D
= 4 A V
GS
= 5 V
(See test circuit, Figure 2)
12.5
5
3
16
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 2 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 1)
125
35
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 4 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 4 A
di/dt = 100A/s
V
DD
= 15 V
T
j
= 150C
(See test circuit, Figure 3)
45
36
1.6
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STS4DPF30L
4/6
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive
Load
5/6
STS4DPF30L
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
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